FDMS8460

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Contact Plating :

Tin

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

2.5W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

6mm

Turn On Delay Time :

19 ns

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

FET Type :

N-Channel

Radiation Hardening :

No

Package / Case :

8-PowerTDFN

Resistance :

2.2MOhm

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

2.2m Ω @ 25A, 10V

Series :

PowerTrench®

Height :

1.05mm

Fall Time (Typ) :

7 ns

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

7205pF @ 20V

Number of Terminations :

5

Drain Current-Max (Abs) (ID) :

49A

Factory Lead Time :

10 Weeks

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

25A Ta 49A Tc

Length :

5mm

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Rise Time :

9ns

Vgs (Max) :

±20V

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Number of Pins :

8

Pbfree Code :

yes

Threshold Voltage :

1.9V

Lead Free :

Lead Free

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-N5

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Continuous Drain Current (ID) :

25A

Turn-Off Delay Time :

48 ns

Terminal Position :

Dual

REACH SVHC :

No SVHC

Voltage :

40V

Drain to Source Breakdown Voltage :

40V

Power Dissipation-Max :

2.5W Ta 104W Tc

Gate to Source Voltage (Vgs) :

20V