FDMS8333L
- Mfr.Part #
- FDMS8333L
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N CH 40V 22A POWER 56
- Stock
- 1,440
- In Stock :
- 1,440
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate Charge (Qg) (Max) @ Vgs :
- 64nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 4.7ns
- Turn-Off Delay Time :
- 33 ns
- Contact Plating :
- Tin
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 2.5W Ta 69W Tc
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Weight :
- 68.1mg
- Power Dissipation :
- 69W
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 22A Ta 76A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- 8-PowerTDFN
- JESD-609 Code :
- e3
- Gate to Source Voltage (Vgs) :
- 20V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Turn On Delay Time :
- 14 ns
- FET Type :
- N-Channel
- Mount :
- Surface Mount
- Series :
- PowerTrench®
- JESD-30 Code :
- R-PDSO-F5
- Pulsed Drain Current-Max (IDM) :
- 250A
- Fall Time (Typ) :
- 4.2 ns
- Number of Terminations :
- 5
- Transistor Application :
- SWITCHING
- Case Connection :
- DRAIN
- Terminal Form :
- Flat
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- 76A
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Lead Free :
- Lead Free
- Number of Pins :
- 8
- JEDEC-95 Code :
- MO-240AA
- Drain Current-Max (Abs) (ID) :
- 22A
- Drain to Source Breakdown Voltage :
- 40V
- Pbfree Code :
- yes
- Factory Lead Time :
- 25 Weeks
- Terminal Position :
- Dual
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 3.1m Ω @ 22A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4545pF @ 20V
- Mounting Type :
- Surface Mount
- Datasheets
- FDMS8333L
FDMS8333L Documents

N-Channel Tape & Reel (TR) 3.1m Ω @ 22A, 10V ±20V 4545pF @ 20V 64nC @ 10V 8-PowerTDFN
FDMS8333L Description
The N-channel MOSFET is designed to improve the overall efficiency of DC-DC converters using synchronous or conventional switching PWM controllers and minimize switch node ringing. It has been optimized for low gate charge, low RDS, fast switching speed and reverse recovery performance of body diodes.
FDMS8333L Features
Max RDS(on) = 3.1 mΩ at VGS = 10 V, ID = 22 A
Max RDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
Applications
Consumer
FDMS8333L Applications
low gate charge
low RDS
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