FDMS8320LDC
- Mfr.Part #
- FDMS8320LDC
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 44A DLCOOL56
- Stock
- 1,395
- In Stock :
- 1,395
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 44A Ta 130A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DS Breakdown Voltage-Min :
- 40V
- JESD-609 Code :
- e3
- Package / Case :
- 8-PowerTDFN
- Width :
- 5.85mm
- Terminal Form :
- Flat
- Fall Time (Typ) :
- 14 ns
- Height :
- 1.05mm
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 8
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 44A
- JESD-30 Code :
- R-PDSO-F5
- Case Connection :
- DRAIN
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Power Dissipation-Max :
- 3.2W Ta 125W Tc
- Factory Lead Time :
- 15 Weeks
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 11635pF @ 20V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Published :
- 2017
- Number of Terminations :
- 5
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Turn On Delay Time :
- 19 ns
- Drain to Source Voltage (Vdss) :
- 40V
- JEDEC-95 Code :
- MO-240AA
- Pbfree Code :
- yes
- Weight :
- 90mg
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Length :
- 5.1mm
- Vgs (Max) :
- ±20V
- Series :
- Dual Cool™, PowerTrench®
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Power Dissipation :
- 3.2W
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 69 ns
- Rds On (Max) @ Id, Vgs :
- 1.1m Ω @ 44A, 10V
- Rise Time :
- 15ns
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Pulsed Drain Current-Max (IDM) :
- 300A
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- FDMS8320LDC

N-Channel Tape & Reel (TR) 1.1m Ω @ 44A, 10V ±20V 11635pF @ 20V 170nC @ 10V 40V 8-PowerTDFN
FDMS8320LDC Description
This N-Channel MOSFET is produced using an advanced Power Trench? process. Advancements in both silicon and Dual Cool? package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance.
FDMS8320LDC Features
-
Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 44 A
-
Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 37 A
-
Advanced Package and Silicon combination for low rDS(on) and high efficiency
-
Next generation enhanced body diode technology, engineered for soft recovery
-
MSL1 robust package design
-
100% UIL tested
-
RoHS Compliant
FDMS8320LDC Applications
-
Energy Generation & Distribution
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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