FDMS8320L
- Mfr.Part #
- FDMS8320L
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 36A/100A 8PQFN
- Stock
- 437
- In Stock :
- 437
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- JEDEC-95 Code :
- MO-240AA
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Surface Mount
- Published :
- 2017
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 1.1m Ω @ 32A, 10V
- Series :
- PowerTrench®
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Number of Pins :
- 8
- Number of Terminations :
- 5
- Width :
- 6mm
- Turn-Off Delay Time :
- 68 ns
- Power Dissipation :
- 104W
- Factory Lead Time :
- 12 Weeks
- Fall Time (Typ) :
- 17 ns
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 2.5W Ta 104W Tc
- Turn On Delay Time :
- 17 ns
- Terminal Finish :
- Tin (Sn)
- Vgs (Max) :
- ±20V
- Rise Time :
- 19ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 36A Ta 100A Tc
- Gate to Source Voltage (Vgs) :
- 20V
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Weight :
- 90mg
- Avalanche Energy Rating (Eas) :
- 264 mJ
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 36A
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Height :
- 1.05mm
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Input Capacitance (Ciss) (Max) @ Vds :
- 11110pF @ 20V
- Length :
- 5mm
- Terminal Form :
- Flat
- JESD-30 Code :
- R-PDSO-F5
- Drain to Source Breakdown Voltage :
- 40V
- Package / Case :
- 8-PowerTDFN
- Datasheets
- FDMS8320L

N-Channel Tape & Reel (TR) 1.1m Ω @ 32A, 10V ±20V 11110pF @ 20V 170nC @ 10V 8-PowerTDFN
FDMS8320L Description
The FDMS8320L N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diode reverse recovery performance.
FDMS8320L Features
-
Advanced Package and Silicon combination for low rDS(on) and high efficiency
-
Next generation enhanced body diode technology, engineered for soft recovery
-
MSL1 robust package design
-
100% UIL tested
-
RoHS Compliant
-
Lead Free
FDMS8320L Applications
-
OringFET / Load Switching
-
Synchronous Rectification
-
DC-DC Conversion
-
New Energy Vehicle
-
Photovoltaic Generation
-
Wind Power Generation
-
Smart Grid
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The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
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