FDMS8050
- Mfr.Part #
- FDMS8050
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CHANNEL 30V 55A 8PQFN
- Stock
- 586
- In Stock :
- 586
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Number of Terminations :
- 5
- Drain-source On Resistance-Max :
- 0.00065Ohm
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- JESD-30 Code :
- R-PDSO-N5
- Peak Reflow Temperature (Cel) :
- 260
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 156W Tc
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Package / Case :
- 8-PowerTDFN
- Gate Charge (Qg) (Max) @ Vgs :
- 285nC @ 10V
- Reach Compliance Code :
- not_compliant
- Current - Continuous Drain (Id) @ 25°C :
- 55A Tc
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 22610pF @ 15V
- DS Breakdown Voltage-Min :
- 30V
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Weight :
- 56.5mg
- HTS Code :
- 8541.29.00.95
- Vgs(th) (Max) @ Id :
- 3V @ 750μA
- ECCN Code :
- EAR99
- JEDEC-95 Code :
- MO-240AA
- Drain Current-Max (Abs) (ID) :
- 55A
- Drain to Source Voltage (Vdss) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- NO LEAD
- Avalanche Energy Rating (Eas) :
- 1536 mJ
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 0.65m Ω @ 55A, 10V
- Pulsed Drain Current-Max (IDM) :
- 400A
- Mounting Type :
- Surface Mount
- Terminal Position :
- Dual
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- Datasheets
- FDMS8050
FDMS8050 Documents

N-Channel Tape & Reel (TR) 0.65m Ω @ 55A, 10V ±20V 22610pF @ 15V 285nC @ 10V 30V 8-PowerTDFN
FDMS8050 is an N-Channel MOSFET designed to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. The FDMS8050 has been optimized for low gate charger and extremely low Rds(on).
The FDMS8050 MOSFET can operate between -55°C and 150°C TJ available in advanced package and silicon combination for low rDS(on).
FDMS8050 Features
Ultra Low RDS(on)
Improve System Efficiency
Optimized for Low Gate Charge
Improve Switching Performance
Advanced Power 5x6mm package
Improve Thermal Conduction
100% UIL tested
RoHS Compliant
FDMS8050 Applications
ORing
DC-DC Synchronous Rectifier
Servers
Netcom
Communication
Cloud Computing
High End Computing
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The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
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