FDMS8050
- Mfr.Part #
- FDMS8050
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CHANNEL 30V 55A 8PQFN
- Stock
- 586
- In Stock :
- 586
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Terminal Position :
- Dual
- Input Capacitance (Ciss) (Max) @ Vds :
- 22610pF @ 15V
- Avalanche Energy Rating (Eas) :
- 1536 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 285nC @ 10V
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Number of Terminations :
- 5
- Terminal Form :
- NO LEAD
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PDSO-N5
- JEDEC-95 Code :
- MO-240AA
- Current - Continuous Drain (Id) @ 25°C :
- 55A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- HTS Code :
- 8541.29.00.95
- DS Breakdown Voltage-Min :
- 30V
- Lead Free :
- Lead Free
- Case Connection :
- DRAIN
- Drain Current-Max (Abs) (ID) :
- 55A
- Power Dissipation-Max :
- 156W Tc
- Terminal Finish :
- Tin (Sn)
- Drain to Source Voltage (Vdss) :
- 30V
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 56.5mg
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3V @ 750μA
- Drain-source On Resistance-Max :
- 0.00065Ohm
- Package / Case :
- 8-PowerTDFN
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Pulsed Drain Current-Max (IDM) :
- 400A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- not_compliant
- Rds On (Max) @ Id, Vgs :
- 0.65m Ω @ 55A, 10V
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 2 days ago)
- Mounting Type :
- Surface Mount
- Datasheets
- FDMS8050

N-Channel Tape & Reel (TR) 0.65m Ω @ 55A, 10V ±20V 22610pF @ 15V 285nC @ 10V 30V 8-PowerTDFN
FDMS8050 is an N-Channel MOSFET designed to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. The FDMS8050 has been optimized for low gate charger and extremely low Rds(on).
The FDMS8050 MOSFET can operate between -55°C and 150°C TJ available in advanced package and silicon combination for low rDS(on).
FDMS8050 Features
Ultra Low RDS(on)
Improve System Efficiency
Optimized for Low Gate Charge
Improve Switching Performance
Advanced Power 5x6mm package
Improve Thermal Conduction
100% UIL tested
RoHS Compliant
FDMS8050 Applications
ORing
DC-DC Synchronous Rectifier
Servers
Netcom
Communication
Cloud Computing
High End Computing
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