FDMS8050

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Weight :

56.5mg

Drain-source On Resistance-Max :

0.00065Ohm

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

30V

Lead Free :

Lead Free

Terminal Position :

Dual

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

0.65m Ω @ 55A, 10V

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 2 days ago)

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

22610pF @ 15V

HTS Code :

8541.29.00.95

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

JESD-30 Code :

R-PDSO-N5

Transistor Application :

SWITCHING

Number of Elements :

1

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

3V @ 750μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

400A

Current - Continuous Drain (Id) @ 25°C :

55A Tc

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

55A

Drain to Source Voltage (Vdss) :

30V

Terminal Form :

NO LEAD

Reach Compliance Code :

not_compliant

Transistor Element Material :

SILICON

Power Dissipation-Max :

156W Tc

Mount :

Surface Mount

Number of Terminations :

5

Avalanche Energy Rating (Eas) :

1536 mJ

JEDEC-95 Code :

MO-240AA

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

8-PowerTDFN

Gate Charge (Qg) (Max) @ Vgs :

285nC @ 10V

ECCN Code :

EAR99