FDMS8025S

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

JESD-609 Code :

e3

Mount :

Surface Mount

Fall Time (Typ) :

3.7 ns

JESD-30 Code :

R-PDSO-F5

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

50W

Drain Current-Max (Abs) (ID) :

24A

Width :

6mm

Lead Free :

Lead Free

Turn-Off Delay Time :

29 ns

Rise Time :

4.5ns

Element Configuration :

Single

Factory Lead Time :

18 Weeks

Drain to Source Breakdown Voltage :

30V

JEDEC-95 Code :

MO-240AA

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

66 mJ

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

8

Power Dissipation-Max :

2.5W Ta 50W Tc

Number of Terminations :

5

Series :

PowerTrench®, SyncFET™

Package / Case :

8-PowerTDFN

Terminal Position :

Dual

Weight :

68.1mg

Resistance :

2.8MOhm

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Threshold Voltage :

1.7V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Vgs(th) (Max) @ Id :

3V @ 1mA

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

11 ns

Length :

5mm

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Current - Continuous Drain (Id) @ 25°C :

24A Ta 49A Tc

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 24A, 10V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Flat

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

100A

Input Capacitance (Ciss) (Max) @ Vds :

3000pF @ 15V

Radiation Hardening :

No

Number of Elements :

1

Pbfree Code :

yes

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

49A

Terminal Finish :

Tin (Sn)

Height :

1.05mm

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Published :

2010