FDMS8020
- Mfr.Part #
- FDMS8020
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 26A/42A 8PQFN
- Stock
- 7,583
- In Stock :
- 7,583
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 26A
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Weight :
- 68.1mg
- Drain Current-Max (Abs) (ID) :
- 42A
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 93 mJ
- Fall Time (Typ) :
- 4 ns
- Number of Elements :
- 1
- Number of Terminations :
- 5
- Gate Charge (Qg) (Max) @ Vgs :
- 61nC @ 10V
- Width :
- 6mm
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Drain-source On Resistance-Max :
- 0.0025Ohm
- Rise Time :
- 5.7ns
- Rds On (Max) @ Id, Vgs :
- 2.5m Ω @ 26A, 10V
- Series :
- PowerTrench®
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PDSO-F5
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 18 Weeks
- Power Dissipation-Max :
- 2.5W Ta 65W Tc
- Terminal Form :
- Flat
- Power Dissipation :
- 65W
- Length :
- 5mm
- Turn On Delay Time :
- 12 ns
- Drain to Source Breakdown Voltage :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Input Capacitance (Ciss) (Max) @ Vds :
- 3800pF @ 15V
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Package / Case :
- 8-PowerTDFN
- Mounting Type :
- Surface Mount
- Published :
- 2010
- Terminal Position :
- Dual
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 32 ns
- Current - Continuous Drain (Id) @ 25°C :
- 26A Ta 42A Tc
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- DRAIN
- JEDEC-95 Code :
- MO-240AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Number of Pins :
- 8
- Peak Reflow Temperature (Cel) :
- 260
- Gate to Source Voltage (Vgs) :
- 20V
- Height :
- 1.05mm
- Datasheets
- FDMS8020
FDMS8020 Documents

N-Channel Tape & Reel (TR) 2.5m Ω @ 26A, 10V ±20V 3800pF @ 15V 61nC @ 10V 8-PowerTDFN
FDMS8020 Description
The FDMS8020 N-Channel MOSFET has been specifically designed to improve overall efficiency and reduce switch node ringing in DC/DC converters utilizing either synchronous or traditional switching PWM controllers. It has been tuned for low gate charge, low RDS(on), quick switching speed, and reverse-recovery performance in body diodes.
FDMS8020 Features
-
Max rDS(on) = 2.5 mΩ at VGS = 10V, ID = 26 A
-
Max rDS(on) = 3.6 mΩ at VGS = 4.5V, ID = 21.5 A
-
Advanced Package and Silicon combination for low rDS(on) and high efficiency
-
MSL1 robust package design
-
100% UIL tested
-
RoHS Compliant
FDMS8020 Applications
-
Consumer
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