FDMS7560S
- Mfr.Part #
- FDMS7560S
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 25V 30A/49A 8PQFN
- Stock
- 10,781
- In Stock :
- 10,781
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 16 ns
- Height :
- 1.05mm
- Nominal Vgs :
- 1.7 V
- Vgs (Max) :
- ±20V
- Length :
- 5.1mm
- Transistor Element Material :
- SILICON
- Package / Case :
- 8-PowerTDFN
- Width :
- 6.25mm
- Continuous Drain Current (ID) :
- 30A
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 93nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Threshold Voltage :
- 1.7V
- Terminal Finish :
- Tin (Sn)
- Terminal Position :
- Dual
- Rise Time :
- 7.4ns
- Power Dissipation-Max :
- 2.5W Ta 89W Tc
- Factory Lead Time :
- 10 Weeks
- ECCN Code :
- EAR99
- Case Connection :
- DRAIN
- JEDEC-95 Code :
- MO-240AA
- Rds On (Max) @ Id, Vgs :
- 1.45m Ω @ 30A, 10V
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Avalanche Energy Rating (Eas) :
- 220 mJ
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 30A Ta 49A Tc
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- Weight :
- 90mg
- Power Dissipation :
- 2.5W
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 41 ns
- Operating Temperature :
- -55°C~150°C TJ
- Fall Time (Typ) :
- 4.8 ns
- Lead Free :
- Lead Free
- Number of Terminations :
- 5
- Terminal Form :
- Flat
- Series :
- PowerTrench®, SyncFET™
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 5945pF @ 13V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Drain to Source Breakdown Voltage :
- 25V
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PDSO-F5
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Number of Pins :
- 8
- Datasheets
- FDMS7560S

N-Channel Tape & Reel (TR) 1.45m Ω @ 30A, 10V ±20V 5945pF @ 13V 93nC @ 10V 8-PowerTDFN
FDMS7560S Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 220 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5945pF @ 13V.This device has a continuous drain current (ID) of [30A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=25V, the drain-source breakdown voltage is 25V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 41 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 16 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 1.7V.Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
FDMS7560S Features
the avalanche energy rating (Eas) is 220 mJ
a continuous drain current (ID) of 30A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 41 ns
a threshold voltage of 1.7V
FDMS7560S Applications
There are a lot of ON Semiconductor
FDMS7560S applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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