FDMS6681Z
- Mfr.Part #
- FDMS6681Z
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 21.1A/49A 8PQFN
- Stock
- 9,436
- In Stock :
- 9,436
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- 8-PowerTDFN
- Rds On (Max) @ Id, Vgs :
- 3.2m Ω @ 22.1A, 10V
- Weight :
- 68.1mg
- Mount :
- Surface Mount
- Width :
- 6mm
- Drain to Source Voltage (Vdss) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Case Connection :
- DRAIN
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 197 ns
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Published :
- 2017
- Threshold Voltage :
- -1.7V
- Length :
- 5mm
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Gate to Source Voltage (Vgs) :
- 25V
- Number of Channels :
- 1
- Feedback Cap-Max (Crss) :
- 2020 pF
- Contact Plating :
- Tin
- Continuous Drain Current (ID) :
- -21.1A
- Number of Elements :
- 1
- Number of Pins :
- 8
- Terminal Position :
- Dual
- Input Capacitance (Ciss) (Max) @ Vds :
- 10380pF @ 15V
- Number of Terminations :
- 5
- Series :
- PowerTrench®
- JESD-30 Code :
- R-PDSO-N5
- Factory Lead Time :
- 10 Weeks
- Height :
- 1.1mm
- Turn On Delay Time :
- 15 ns
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±25V
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 260 ns
- FET Type :
- P-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 241nC @ 10V
- Drain to Source Breakdown Voltage :
- -30V
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 21.1A Ta 49A Tc
- Lead Free :
- Lead Free
- Rise Time :
- 38ns
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 2.5W Ta 73W Tc
- REACH SVHC :
- No SVHC
- Resistance :
- 3.2mOhm
- Pbfree Code :
- yes
- Power Dissipation :
- 2.5W
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Max Junction Temperature (Tj) :
- 150°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Datasheets
- FDMS6681Z

P-Channel Tape & Reel (TR) 3.2m Ω @ 22.1A, 10V ±25V 10380pF @ 15V 241nC @ 10V 30V 8-PowerTDFN
FDMS6681Z Description
The FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.
FDMS6681Z Features
-
Max rDS(on) = 3.2 mΩ at VGS = ?10 V, ID = ?21.1 A
-
Max rDS(on) = 5.0 mΩ at VGS = ?4.5 V, ID = ?15.7 A
-
Advanced Package and Silicon Combination for Low rDS(on)
-
HBM ESD Protection Level of 8 kV Typical
-
MSL1 Robust Package Design
-
RoHS Compliant
FDMS6681Z Applications
-
Load Switch in Notebook and Server
-
Notebook Battery Pack Power Management
-
New Energy Vehicle
-
Photovoltaic Generation
-
Wind Power Generation
-
Smart Grid
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