FDMS6673BZ
- Mfr.Part #
- FDMS6673BZ
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- SMALL SIGNAL FIELD-EFFECT TRANSI
- Stock
- 32,694
- In Stock :
- 32,694
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 15.2A Ta 28A Tc
- Qualification Status :
- Not Qualified
- FET Type :
- P-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Vgs (Max) :
- ±25V
- JESD-30 Code :
- R-PDSO-F5
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Terminations :
- 5
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 30V
- Factory Lead Time :
- 10 Weeks
- DS Breakdown Voltage-Min :
- 30V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Drain Current-Max (Abs) (ID) :
- 15.2A
- Pbfree Code :
- yes
- Published :
- 2009
- HTS Code :
- 8541.29.00.95
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Drain-source On Resistance-Max :
- 0.0068Ohm
- Package / Case :
- 8-PowerTDFN
- Surface Mount :
- yes
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 5915pF @ 15V
- Rds On (Max) @ Id, Vgs :
- 6.8m Ω @ 15.2A, 10V
- Terminal Form :
- Flat
- Terminal Position :
- Dual
- Reach Compliance Code :
- not_compliant
- Packaging :
- Tape and Reel (TR)
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Feedback Cap-Max (Crss) :
- 1045 pF
- JESD-609 Code :
- e3
- JEDEC-95 Code :
- MO-240AA
- Series :
- PowerTrench®
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation-Max :
- 2.5W Ta 73W Tc
- Datasheets
- FDMS6673BZ

P-Channel Tape & Reel (TR) 6.8m Ω @ 15.2A, 10V ±25V 5915pF @ 15V 130nC @ 10V 30V 8-PowerTDFN
FDMS6673BZ Description
The FDMS6673BZ is a P-channel MOSFET produced using Fairchild Semiconductor's PowerTrench? process. The onsemi FDMS6673BZ is designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS (ON) and ESD protection. The FDMS6673BZ is suitable for load switch and battery pack applications.
FDMS6673BZ Features
-
Max rDS(on) = 6.8 mΩ at VGS = -10 V, ID = -15.2 A
-
Max rDS(on) = 12.5 mΩ at VGS = -4.5 V, ID = -11.2 A
-
Advanced Package and Silicon combination for low rDS(on)
-
HBM ESD protection level of 8 kV typical (Note 3)
-
MSL1 robust package design
-
RoHS Compliant
FDMS6673BZ Applications
-
Load Switch in Notebook and Server
-
Notebook Battery Pack Power Management
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