FDMS6673BZ

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Mfr.Part #
FDMS6673BZ
Manufacturer
Fairchild Semiconductor
Package / Case
8-PowerTDFN
Datasheet
Download
Description
SMALL SIGNAL FIELD-EFFECT TRANSI
Stock
32,694
In Stock :
32,694

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Current - Continuous Drain (Id) @ 25°C :
15.2A Ta 28A Tc
Qualification Status :
Not Qualified
FET Type :
P-Channel
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Number of Elements :
1
Vgs (Max) :
±25V
JESD-30 Code :
R-PDSO-F5
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Number of Terminations :
5
Mounting Type :
Surface Mount
Drain to Source Voltage (Vdss) :
30V
Factory Lead Time :
10 Weeks
DS Breakdown Voltage-Min :
30V
Vgs(th) (Max) @ Id :
3V @ 250µA
Drain Current-Max (Abs) (ID) :
15.2A
Pbfree Code :
yes
Published :
2009
HTS Code :
8541.29.00.95
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Element Material :
SILICON
Gate Charge (Qg) (Max) @ Vgs :
130nC @ 10V
Drain-source On Resistance-Max :
0.0068Ohm
Package / Case :
8-PowerTDFN
Surface Mount :
yes
Case Connection :
DRAIN
Transistor Application :
SWITCHING
Input Capacitance (Ciss) (Max) @ Vds :
5915pF @ 15V
Rds On (Max) @ Id, Vgs :
6.8m Ω @ 15.2A, 10V
Terminal Form :
Flat
Terminal Position :
Dual
Reach Compliance Code :
not_compliant
Packaging :
Tape and Reel (TR)
Configuration :
SINGLE WITH BUILT-IN DIODE
ECCN Code :
EAR99
Terminal Finish :
Tin (Sn)
RoHS Status :
ROHS3 Compliant
Feedback Cap-Max (Crss) :
1045 pF
JESD-609 Code :
e3
JEDEC-95 Code :
MO-240AA
Series :
PowerTrench®
Operating Mode :
ENHANCEMENT MODE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
Power Dissipation-Max :
2.5W Ta 73W Tc
Datasheets
FDMS6673BZ
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDMS6673BZ from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:5, Mounting Type:Surface Mount, Package / Case:8-PowerTDFN, Operating Temperature:-55°C~150°C TJ, FDMS6673BZ pinout, FDMS6673BZ datasheet PDF, FDMS6673BZ amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FDMS6673BZ ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FDMS6673BZ


P-Channel Tape & Reel (TR) 6.8m Ω @ 15.2A, 10V ±25V 5915pF @ 15V 130nC @ 10V 30V 8-PowerTDFN

FDMS6673BZ Description


The FDMS6673BZ is a P-channel MOSFET produced using Fairchild Semiconductor's PowerTrench? process. The onsemi FDMS6673BZ is designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS (ON) and ESD protection. The FDMS6673BZ is suitable for load switch and battery pack applications.



FDMS6673BZ Features


  • Max rDS(on) = 6.8 mΩ at VGS = -10 V, ID = -15.2 A

  • Max rDS(on) = 12.5 mΩ at VGS = -4.5 V, ID = -11.2 A

  • Advanced Package and Silicon combination for low rDS(on)

  • HBM ESD protection level of 8 kV typical (Note 3)

  • MSL1 robust package design

  • RoHS Compliant



FDMS6673BZ Applications


  • Load Switch in Notebook and Server

  • Notebook Battery Pack Power Management


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