FDMS6673BZ
- Mfr.Part #
- FDMS6673BZ
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 15.2A/28A 8PQFN
- Stock
- 26,387
- In Stock :
- 26,387
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- PowerTrench®
- Feedback Cap-Max (Crss) :
- 1045 pF
- DS Breakdown Voltage-Min :
- 30V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Transistor Element Material :
- SILICON
- RoHS Status :
- ROHS3 Compliant
- HTS Code :
- 8541.29.00.95
- Published :
- 2009
- Rds On (Max) @ Id, Vgs :
- 6.8m Ω @ 15.2A, 10V
- Surface Mount :
- yes
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Mounting Type :
- Surface Mount
- Package / Case :
- 8-PowerTDFN
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PDSO-F5
- Drain-source On Resistance-Max :
- 0.0068Ohm
- Qualification Status :
- Not Qualified
- Terminal Form :
- Flat
- Vgs (Max) :
- ±25V
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 10 Weeks
- Power Dissipation-Max :
- 2.5W Ta 73W Tc
- Number of Terminations :
- 5
- Terminal Position :
- Dual
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Tin (Sn)
- FET Type :
- P-Channel
- JESD-609 Code :
- e3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 15.2A Ta 28A Tc
- Drain Current-Max (Abs) (ID) :
- 15.2A
- Transistor Application :
- SWITCHING
- Input Capacitance (Ciss) (Max) @ Vds :
- 5915pF @ 15V
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Reach Compliance Code :
- not_compliant
- JEDEC-95 Code :
- MO-240AA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Datasheets
- FDMS6673BZ

P-Channel Tape & Reel (TR) 6.8m Ω @ 15.2A, 10V ±25V 5915pF @ 15V 130nC @ 10V 30V 8-PowerTDFN
FDMS6673BZ Description
The FDMS6673BZ is a P-channel MOSFET produced using Fairchild Semiconductor's PowerTrench? process. The onsemi FDMS6673BZ is designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS (ON) and ESD protection. The FDMS6673BZ is suitable for load switch and battery pack applications.
FDMS6673BZ Features
-
Max rDS(on) = 6.8 mΩ at VGS = -10 V, ID = -15.2 A
-
Max rDS(on) = 12.5 mΩ at VGS = -4.5 V, ID = -11.2 A
-
Advanced Package and Silicon combination for low rDS(on)
-
HBM ESD protection level of 8 kV typical (Note 3)
-
MSL1 robust package design
-
RoHS Compliant
FDMS6673BZ Applications
-
Load Switch in Notebook and Server
-
Notebook Battery Pack Power Management
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