FDMS6673BZ
- Mfr.Part #
- FDMS6673BZ
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 15.2A/28A 8PQFN
- Stock
- 26,387
- In Stock :
- 26,387
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Finish :
- Tin (Sn)
- JESD-30 Code :
- R-PDSO-F5
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Terminal Form :
- Flat
- ECCN Code :
- EAR99
- Package / Case :
- 8-PowerTDFN
- Rds On (Max) @ Id, Vgs :
- 6.8m Ω @ 15.2A, 10V
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 15.2A
- Input Capacitance (Ciss) (Max) @ Vds :
- 5915pF @ 15V
- JESD-609 Code :
- e3
- Factory Lead Time :
- 10 Weeks
- Drain to Source Voltage (Vdss) :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Reach Compliance Code :
- not_compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 130nC @ 10V
- Surface Mount :
- yes
- Drain-source On Resistance-Max :
- 0.0068Ohm
- FET Type :
- P-Channel
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DS Breakdown Voltage-Min :
- 30V
- Terminal Position :
- Dual
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 5
- Series :
- PowerTrench®
- Operating Mode :
- ENHANCEMENT MODE
- HTS Code :
- 8541.29.00.95
- Feedback Cap-Max (Crss) :
- 1045 pF
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Published :
- 2009
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Vgs (Max) :
- ±25V
- JEDEC-95 Code :
- MO-240AA
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Surface Mount
- Power Dissipation-Max :
- 2.5W Ta 73W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 15.2A Ta 28A Tc
- Pbfree Code :
- yes
- Datasheets
- FDMS6673BZ
FDMS6673BZ Documents

P-Channel Tape & Reel (TR) 6.8m Ω @ 15.2A, 10V ±25V 5915pF @ 15V 130nC @ 10V 30V 8-PowerTDFN
FDMS6673BZ Description
The FDMS6673BZ is a P-channel MOSFET produced using Fairchild Semiconductor's PowerTrench? process. The onsemi FDMS6673BZ is designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS (ON) and ESD protection. The FDMS6673BZ is suitable for load switch and battery pack applications.
FDMS6673BZ Features
-
Max rDS(on) = 6.8 mΩ at VGS = -10 V, ID = -15.2 A
-
Max rDS(on) = 12.5 mΩ at VGS = -4.5 V, ID = -11.2 A
-
Advanced Package and Silicon combination for low rDS(on)
-
HBM ESD protection level of 8 kV typical (Note 3)
-
MSL1 robust package design
-
RoHS Compliant
FDMS6673BZ Applications
-
Load Switch in Notebook and Server
-
Notebook Battery Pack Power Management
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