FDMS6673BZ

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Mfr.Part #
FDMS6673BZ
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET P-CH 30V 15.2A/28A 8PQFN
Stock
26,387
In Stock :
26,387

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Finish :
Tin (Sn)
JESD-30 Code :
R-PDSO-F5
Transistor Element Material :
SILICON
Vgs(th) (Max) @ Id :
3V @ 250µA
Terminal Form :
Flat
ECCN Code :
EAR99
Package / Case :
8-PowerTDFN
Rds On (Max) @ Id, Vgs :
6.8m Ω @ 15.2A, 10V
Case Connection :
DRAIN
Number of Elements :
1
Drain Current-Max (Abs) (ID) :
15.2A
Input Capacitance (Ciss) (Max) @ Vds :
5915pF @ 15V
JESD-609 Code :
e3
Factory Lead Time :
10 Weeks
Drain to Source Voltage (Vdss) :
30V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Reach Compliance Code :
not_compliant
Gate Charge (Qg) (Max) @ Vgs :
130nC @ 10V
Surface Mount :
yes
Drain-source On Resistance-Max :
0.0068Ohm
FET Type :
P-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
DS Breakdown Voltage-Min :
30V
Terminal Position :
Dual
RoHS Status :
ROHS3 Compliant
Number of Terminations :
5
Series :
PowerTrench®
Operating Mode :
ENHANCEMENT MODE
HTS Code :
8541.29.00.95
Feedback Cap-Max (Crss) :
1045 pF
Qualification Status :
Not Qualified
Operating Temperature :
-55°C~150°C TJ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Packaging :
Tape and Reel (TR)
Transistor Application :
SWITCHING
Published :
2009
Configuration :
SINGLE WITH BUILT-IN DIODE
Vgs (Max) :
±25V
JEDEC-95 Code :
MO-240AA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Mounting Type :
Surface Mount
Power Dissipation-Max :
2.5W Ta 73W Tc
Current - Continuous Drain (Id) @ 25°C :
15.2A Ta 28A Tc
Pbfree Code :
yes
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMS6673BZ from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:8-PowerTDFN, Number of Terminations:5, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, FDMS6673BZ pinout, FDMS6673BZ datasheet PDF, FDMS6673BZ amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMS6673BZ ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS6673BZ


P-Channel Tape & Reel (TR) 6.8m Ω @ 15.2A, 10V ±25V 5915pF @ 15V 130nC @ 10V 30V 8-PowerTDFN

FDMS6673BZ Description


The FDMS6673BZ is a P-channel MOSFET produced using Fairchild Semiconductor's PowerTrench? process. The onsemi FDMS6673BZ is designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS (ON) and ESD protection. The FDMS6673BZ is suitable for load switch and battery pack applications.



FDMS6673BZ Features


  • Max rDS(on) = 6.8 mΩ at VGS = -10 V, ID = -15.2 A

  • Max rDS(on) = 12.5 mΩ at VGS = -4.5 V, ID = -11.2 A

  • Advanced Package and Silicon combination for low rDS(on)

  • HBM ESD protection level of 8 kV typical (Note 3)

  • MSL1 robust package design

  • RoHS Compliant



FDMS6673BZ Applications


  • Load Switch in Notebook and Server

  • Notebook Battery Pack Power Management


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