FDMS5362LF085
- Mfr.Part #
- FDMS5362LF085
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- N-CHANNEL POWER TRENCH MOSFET
- Stock
- 19,520
- In Stock :
- 19,520
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- 8-PowerTDFN
- Factory Lead Time :
- 14 Weeks
- Terminal Finish :
- Tin (Sn)
- Fall Time (Typ) :
- 4 ns
- Lifecycle Status :
- LIFETIME (Last Updated: 1 week ago)
- Rds On (Max) @ Id, Vgs :
- 33m Ω @ 17.6A, 10V
- JESD-609 Code :
- e3
- Number of Pins :
- 8
- JESD-30 Code :
- R-PDSO-F5
- Element Configuration :
- Single
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 21nC @ 10V
- Pbfree Code :
- yes
- Continuous Drain Current (ID) :
- 17.6A
- Weight :
- 172.8mg
- Terminal Form :
- Flat
- Operating Temperature :
- -55°C~175°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs (Max) :
- ±20V
- Terminal Position :
- Dual
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Avalanche Energy Rating (Eas) :
- 32 mJ
- Packaging :
- Tape and Reel (TR)
- Drain-source On Resistance-Max :
- 0.042Ohm
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 31 ns
- Mounting Type :
- Surface Mount
- Rise Time :
- 4ns
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Reach Compliance Code :
- not_compliant
- Drain to Source Breakdown Voltage :
- 60V
- Current - Continuous Drain (Id) @ 25°C :
- 17.6A Tc
- Transistor Element Material :
- SILICON
- Number of Channels :
- 1
- Number of Terminations :
- 5
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 878pF @ 25V
- Turn On Delay Time :
- 11 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Series :
- Automotive, AEC-Q101, PowerTrench®
- Power Dissipation-Max :
- 41.7W Tc
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Application :
- SWITCHING
- Datasheets
- FDMS5362LF085
N-Channel Tape & Reel (TR) 33m Ω @ 17.6A, 10V ±20V 878pF @ 25V 21nC @ 10V 8-PowerTDFN
FDMS5362L-F085 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 32 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 878pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 17.6A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 31 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
FDMS5362L-F085 Features
the avalanche energy rating (Eas) is 32 mJ
a continuous drain current (ID) of 17.6A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 31 ns
FDMS5362L-F085 Applications
There are a lot of ON Semiconductor
FDMS5362L-F085 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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