FDMS5352

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Threshold Voltage :

1.8V

Factory Lead Time :

10 Weeks

Vgs (Max) :

±20V

Width :

6mm

Input Capacitance (Ciss) (Max) @ Vds :

6940pF @ 30V

Terminal Position :

Dual

FET Type :

N-Channel

Terminal Form :

Flat

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Series :

PowerTrench®

Gate to Source Voltage (Vgs) :

20V

Package / Case :

8-PowerTDFN

Turn On Delay Time :

19 ns

REACH SVHC :

No SVHC

Rise Time :

11ns

JESD-30 Code :

R-PDSO-F5

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Number of Pins :

8

Drain Current-Max (Abs) (ID) :

49A

Published :

2009

Weight :

68.1mg

JESD-609 Code :

e3

Number of Elements :

1

Resistance :

6.7mOhm

Fall Time (Typ) :

7 ns

Length :

5mm

Gate Charge (Qg) (Max) @ Vgs :

131nC @ 10V

Pbfree Code :

yes

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

600 mJ

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

3V @ 250µA

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Terminal Finish :

Tin (Sn)

Power Dissipation-Max :

2.5W Ta 104W Tc

Operating Mode :

ENHANCEMENT MODE

Height :

1.05mm

Turn-Off Delay Time :

58 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Breakdown Voltage :

60V

Continuous Drain Current (ID) :

13.6A

Lead Free :

Lead Free

Power Dissipation :

2.5W

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

13.6A Ta 49A Tc

Rds On (Max) @ Id, Vgs :

6.7m Ω @ 13.6A, 10V

Radiation Hardening :

No

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

5

Case Connection :

DRAIN