FDMS4435BZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

10ns

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

50A

Drain Current-Max (Abs) (ID) :

9A

Drain to Source Breakdown Voltage :

-30V

Transistor Element Material :

SILICON

Length :

5mm

ECCN Code :

EAR99

Vgs (Max) :

±25V

Packaging :

Tape and Reel (TR)

Power Dissipation :

39W

Operating Mode :

ENHANCEMENT MODE

Width :

6mm

Terminal Form :

Flat

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Weight :

74mg

Vgs(th) (Max) @ Id :

3V @ 250µA

REACH SVHC :

No SVHC

JESD-609 Code :

e3

JESD-30 Code :

R-PDSO-F5

Package / Case :

8-PowerTDFN

Height :

1.05mm

Factory Lead Time :

26 Weeks

Case Connection :

DRAIN

Published :

2006

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

19 ns

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

9A

Threshold Voltage :

-1.9V

Current - Continuous Drain (Id) @ 25°C :

9A Ta 18A Tc

Turn-Off Delay Time :

35 ns

Element Configuration :

Single

Additional Feature :

ULTRA-LOW RESISTANCE

Input Capacitance (Ciss) (Max) @ Vds :

2050pF @ 15V

Drain-source On Resistance-Max :

0.02Ohm

Terminal Finish :

Tin (Sn)

FET Type :

P-Channel

Number of Elements :

1

JEDEC-95 Code :

MO-240AA

Turn On Delay Time :

9 ns

Mount :

Surface Mount

Number of Terminations :

5

Series :

PowerTrench®

Mounting Type :

Surface Mount

Number of Pins :

8

Power Dissipation-Max :

2.5W Ta 39W Tc

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

20m Ω @ 9A, 10V

Gate to Source Voltage (Vgs) :

25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

30V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Terminal Position :

Dual

Pbfree Code :

yes