FDMS4435BZ

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Mfr.Part #
FDMS4435BZ
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET P-CH 30V 9A/18A 8PQFN
Stock
2,448
In Stock :
2,448

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
ECCN Code :
EAR99
Drain Current-Max (Abs) (ID) :
9A
RoHS Status :
ROHS3 Compliant
Rise Time :
10ns
Terminal Finish :
Tin (Sn)
Turn-Off Delay Time :
35 ns
Fall Time (Typ) :
19 ns
JESD-609 Code :
e3
Transistor Element Material :
SILICON
Mounting Type :
Surface Mount
Continuous Drain Current (ID) :
9A
Current - Continuous Drain (Id) @ 25°C :
9A Ta 18A Tc
Package / Case :
8-PowerTDFN
Drain-source On Resistance-Max :
0.02Ohm
REACH SVHC :
No SVHC
Transistor Application :
SWITCHING
Pbfree Code :
yes
Element Configuration :
Single
Packaging :
Tape and Reel (TR)
Terminal Form :
Flat
Vgs(th) (Max) @ Id :
3V @ 250µA
Gate to Source Voltage (Vgs) :
25V
JEDEC-95 Code :
MO-240AA
Weight :
74mg
Published :
2006
Pulsed Drain Current-Max (IDM) :
50A
Number of Pins :
8
JESD-30 Code :
R-PDSO-F5
Rds On (Max) @ Id, Vgs :
20m Ω @ 9A, 10V
Operating Mode :
ENHANCEMENT MODE
Radiation Hardening :
No
Vgs (Max) :
±25V
Input Capacitance (Ciss) (Max) @ Vds :
2050pF @ 15V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Width :
6mm
Height :
1.05mm
Case Connection :
DRAIN
Threshold Voltage :
-1.9V
Power Dissipation-Max :
2.5W Ta 39W Tc
Terminal Position :
Dual
Number of Elements :
1
Operating Temperature :
-55°C~150°C TJ
Drain to Source Voltage (Vdss) :
30V
Additional Feature :
ULTRA-LOW RESISTANCE
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Mount :
Surface Mount
Drain to Source Breakdown Voltage :
-30V
Turn On Delay Time :
9 ns
Series :
PowerTrench®
Factory Lead Time :
26 Weeks
FET Type :
P-Channel
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Power Dissipation :
39W
Gate Charge (Qg) (Max) @ Vgs :
47nC @ 10V
Number of Terminations :
5
Length :
5mm
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMS4435BZ from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:8-PowerTDFN, Number of Pins:8, Operating Temperature:-55°C~150°C TJ, Number of Terminations:5, FDMS4435BZ pinout, FDMS4435BZ datasheet PDF, FDMS4435BZ amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMS4435BZ ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS4435BZ


P-Channel Tape & Reel (TR) 20m Ω @ 9A, 10V ±25V 2050pF @ 15V 47nC @ 10V 30V 8-PowerTDFN

FDMS4435BZ Description


This PChannel MOSFET is made with onsemi's innovative POWERTRENCH technique, which is specifically designed to reduce onstate resistance. This device is ideal for Power Management and load switching applications found in notebook computers and portable battery packs.



FDMS4435BZ Features


  • Max rDS(on) = 20 m at VGS = ?10 V, ID = ?8.5 A

  • Max rDS(on) = 37 m at VGS = ?4.5 V, ID = ?6.3 A

  • Extended VGSS Range (?25 V) for Battery Applications

  • High Performance Trench Technology for Extremely Low rDS(on)

  • High Power and Current Handling Capability

  • HBM ESD Protection Level > 7 kV Typical*

  • 100% UIL Tested

  • These Devices are Pb?Free and are RoHS Compliant



FDMS4435BZ Applications


  • High Side in DC ? DC Buck Converters

  • Notebook Battery Power Management

  • Load Switch in Notebook


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