FDMS4435BZ
- Mfr.Part #
- FDMS4435BZ
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 9A/18A 8PQFN
- Stock
- 2,448
- In Stock :
- 2,448
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Weight :
- 74mg
- Power Dissipation :
- 39W
- Threshold Voltage :
- -1.9V
- Number of Terminations :
- 5
- Mount :
- Surface Mount
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 2050pF @ 15V
- REACH SVHC :
- No SVHC
- Drain to Source Breakdown Voltage :
- -30V
- JEDEC-95 Code :
- MO-240AA
- Fall Time (Typ) :
- 19 ns
- Power Dissipation-Max :
- 2.5W Ta 39W Tc
- Number of Elements :
- 1
- Length :
- 5mm
- Current - Continuous Drain (Id) @ 25°C :
- 9A Ta 18A Tc
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- FET Type :
- P-Channel
- Width :
- 6mm
- Pulsed Drain Current-Max (IDM) :
- 50A
- Gate Charge (Qg) (Max) @ Vgs :
- 47nC @ 10V
- Drain to Source Voltage (Vdss) :
- 30V
- Gate to Source Voltage (Vgs) :
- 25V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 10ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Turn-Off Delay Time :
- 35 ns
- Published :
- 2006
- Rds On (Max) @ Id, Vgs :
- 20m Ω @ 9A, 10V
- Continuous Drain Current (ID) :
- 9A
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Additional Feature :
- ULTRA-LOW RESISTANCE
- Operating Temperature :
- -55°C~150°C TJ
- Drain-source On Resistance-Max :
- 0.02Ohm
- Package / Case :
- 8-PowerTDFN
- Factory Lead Time :
- 26 Weeks
- JESD-30 Code :
- R-PDSO-F5
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Tin (Sn)
- Terminal Form :
- Flat
- Number of Pins :
- 8
- Transistor Application :
- SWITCHING
- Series :
- PowerTrench®
- Drain Current-Max (Abs) (ID) :
- 9A
- Transistor Element Material :
- SILICON
- Height :
- 1.05mm
- Vgs (Max) :
- ±25V
- Terminal Position :
- Dual
- Turn On Delay Time :
- 9 ns
- Datasheets
- FDMS4435BZ

P-Channel Tape & Reel (TR) 20m Ω @ 9A, 10V ±25V 2050pF @ 15V 47nC @ 10V 30V 8-PowerTDFN
FDMS4435BZ Description
This PChannel MOSFET is made with onsemi's innovative POWERTRENCH technique, which is specifically designed to reduce onstate resistance. This device is ideal for Power Management and load switching applications found in notebook computers and portable battery packs.
FDMS4435BZ Features
-
Max rDS(on) = 20 m at VGS = ?10 V, ID = ?8.5 A
-
Max rDS(on) = 37 m at VGS = ?4.5 V, ID = ?6.3 A
-
Extended VGSS Range (?25 V) for Battery Applications
-
High Performance Trench Technology for Extremely Low rDS(on)
-
High Power and Current Handling Capability
-
HBM ESD Protection Level > 7 kV Typical*
-
100% UIL Tested
-
These Devices are Pb?Free and are RoHS Compliant
FDMS4435BZ Applications
-
High Side in DC ? DC Buck Converters
-
Notebook Battery Power Management
-
Load Switch in Notebook
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The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
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