FDMS3672

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

23mOhm

Length :

5mm

JESD-609 Code :

e4

Drain to Source Breakdown Voltage :

100V

Turn-Off Delay Time :

36 ns

Current Rating :

22A

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Turn On Delay Time :

23 ns

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Current :

22A

Current - Continuous Drain (Id) @ 25°C :

7.4A Ta 22A Tc

Power Dissipation :

2.5W

Fall Time (Typ) :

8 ns

Number of Terminations :

8

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Terminal Position :

Dual

Contact Plating :

Gold

Factory Lead Time :

10 Weeks

Voltage :

100V

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

23m Ω @ 7.4A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

7.4A

Voltage - Rated DC :

100V

Lead Free :

Lead Free

Number of Pins :

8

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Power Dissipation-Max :

2.5W Ta 78W Tc

Input Capacitance (Ciss) (Max) @ Vds :

2680pF @ 50V

Vgs (Max) :

±20V

Series :

UltraFET™

Package / Case :

8-PowerWDFN

Vgs(th) (Max) @ Id :

4V @ 250µA

Height :

750μm

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

11ns

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Width :

6mm

Number of Elements :

1

Radiation Hardening :

No