FDMS3672
- Mfr.Part #
- FDMS3672
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- FDMS3672 - N-CHANNEL ULTRAFET TR
- Stock
- 12,194
- In Stock :
- 12,194
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 36 ns
- Rds On (Max) @ Id, Vgs :
- 23m Ω @ 7.4A, 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Width :
- 6mm
- Voltage - Rated DC :
- 100V
- Power Dissipation-Max :
- 2.5W Ta 78W Tc
- Vgs (Max) :
- ±20V
- Series :
- UltraFET™
- Height :
- 750μm
- Turn On Delay Time :
- 23 ns
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 8
- Power Dissipation :
- 2.5W
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 8 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Contact Plating :
- Gold
- Operating Mode :
- ENHANCEMENT MODE
- Resistance :
- 23mOhm
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package / Case :
- 8-PowerWDFN
- Number of Terminations :
- 8
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 7.4A
- Length :
- 5mm
- Voltage :
- 100V
- JESD-609 Code :
- e4
- Input Capacitance (Ciss) (Max) @ Vds :
- 2680pF @ 50V
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Factory Lead Time :
- 10 Weeks
- Current Rating :
- 22A
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 11ns
- Current - Continuous Drain (Id) @ 25°C :
- 7.4A Ta 22A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 44nC @ 10V
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 100V
- Current :
- 22A
- Terminal Position :
- Dual
- Datasheets
- FDMS3672
N-Channel Tape & Reel (TR) 23m Ω @ 7.4A, 10V ±20V 2680pF @ 50V 44nC @ 10V 8-PowerWDFN
FDMS3672 Description
FDMS3672 is a 100V N-Channel UltraFET Trench MOSFET. The onsemi FDMS3672 combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total, and Miller gate charge, the FDMS3672 is ideal for high-frequency DC-to-DC converters. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET FDMS3672 is in the Power-56-8 package with 2.5W power dissipation.
FDMS3672 Features
-
Maximum RDS(on) = 23 mΩ at VGS = 10V, ID = 7.4A
-
Maximum RDS(on) = 29 mΩ at VGS= 6V, ID = 6.6A
-
Typical Qg = 31 nC at VGS = 10 V
-
Low Miller Charge
-
Optimized efficiency at high frequencies
FDMS3672 Applications
-
cellular phones
-
laptop computers
-
photovoltaic systems
-
wind turbines
-
shunt voltage regulator and the series voltage regulator
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