FDMS3672
- Mfr.Part #
- FDMS3672
- Manufacturer
- onsemi
- Package / Case
- 8-PowerWDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 7.4A/22A 8MLP
- Stock
- 19,081
- In Stock :
- 19,081
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Elements :
- 1
- Factory Lead Time :
- 10 Weeks
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Voltage :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 36 ns
- Drain to Source Breakdown Voltage :
- 100V
- Rds On (Max) @ Id, Vgs :
- 23m Ω @ 7.4A, 10V
- Number of Pins :
- 8
- Length :
- 5mm
- Fall Time (Typ) :
- 8 ns
- Width :
- 6mm
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Surface Mount
- JESD-609 Code :
- e4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current :
- 22A
- Power Dissipation :
- 2.5W
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Pbfree Code :
- yes
- Contact Plating :
- Gold
- Vgs (Max) :
- ±20V
- Series :
- UltraFET™
- Continuous Drain Current (ID) :
- 7.4A
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Current - Continuous Drain (Id) @ 25°C :
- 7.4A Ta 22A Tc
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- Power Dissipation-Max :
- 2.5W Ta 78W Tc
- Voltage - Rated DC :
- 100V
- Resistance :
- 23mOhm
- ECCN Code :
- EAR99
- Number of Terminations :
- 8
- Transistor Element Material :
- SILICON
- Gate Charge (Qg) (Max) @ Vgs :
- 44nC @ 10V
- Rise Time :
- 11ns
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Turn On Delay Time :
- 23 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Height :
- 750μm
- Package / Case :
- 8-PowerWDFN
- Input Capacitance (Ciss) (Max) @ Vds :
- 2680pF @ 50V
- Current Rating :
- 22A
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Datasheets
- FDMS3672
N-Channel Tape & Reel (TR) 23m Ω @ 7.4A, 10V ±20V 2680pF @ 50V 44nC @ 10V 8-PowerWDFN
FDMS3672 Description
FDMS3672 is a 100V N-Channel UltraFET Trench MOSFET. The onsemi FDMS3672 combines characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total, and Miller gate charge, the FDMS3672 is ideal for high-frequency DC-to-DC converters. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET FDMS3672 is in the Power-56-8 package with 2.5W power dissipation.
FDMS3672 Features
-
Maximum RDS(on) = 23 mΩ at VGS = 10V, ID = 7.4A
-
Maximum RDS(on) = 29 mΩ at VGS= 6V, ID = 6.6A
-
Typical Qg = 31 nC at VGS = 10 V
-
Low Miller Charge
-
Optimized efficiency at high frequencies
FDMS3672 Applications
-
cellular phones
-
laptop computers
-
photovoltaic systems
-
wind turbines
-
shunt voltage regulator and the series voltage regulator
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