FDMS3662
- Mfr.Part #
- FDMS3662
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 8.9A/49A 8PQFN
- Stock
- 1,192
- In Stock :
- 1,192
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- 8.9A
- Length :
- 5mm
- JESD-609 Code :
- e3
- Package / Case :
- 8-PowerTDFN
- Nominal Vgs :
- 3.5 V
- Terminal Position :
- Dual
- Current - Continuous Drain (Id) @ 25°C :
- 8.9A Ta 49A Tc
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Threshold Voltage :
- 3.5V
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PDSO-F5
- Rds On (Max) @ Id, Vgs :
- 14.8m Ω @ 8.9A, 10V
- Width :
- 6mm
- Radiation Hardening :
- No
- Weight :
- 68.1mg
- Power Dissipation :
- 2.5W
- Gate Charge (Qg) (Max) @ Vgs :
- 75nC @ 10V
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Resistance :
- 14.8mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 4620pF @ 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Terminal Form :
- Flat
- Height :
- 1.05mm
- Turn On Delay Time :
- 25 ns
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 6 ns
- Turn-Off Delay Time :
- 32 ns
- Power Dissipation-Max :
- 2.5W Ta 104W Tc
- RoHS Status :
- ROHS3 Compliant
- REACH SVHC :
- No SVHC
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Drain to Source Breakdown Voltage :
- 100V
- ECCN Code :
- EAR99
- Number of Pins :
- 8
- Pbfree Code :
- yes
- Factory Lead Time :
- 10 Weeks
- Number of Terminations :
- 5
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 90A
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Drain Current-Max (Abs) (ID) :
- 49A
- FET Type :
- N-Channel
- Rise Time :
- 15ns
- Series :
- PowerTrench®
- Datasheets
- FDMS3662
FDMS3662 Documents

N-Channel Tape & Reel (TR) 14.8m Ω @ 8.9A, 10V ±20V 4620pF @ 50V 75nC @ 10V 8-PowerTDFN
FDMS3662 Description
The FDMS3662 N-Channel MOSFET is made with Fairchild Semiconductor's innovative Power Trench process, which is specifically designed to reduce on-state resistance while maintaining exceptional switching performance.
FDMS3662 Features
At Vgs = 10V, Id = 8.9A, Maxds(o n) = 14.8mQ.
MSL1 durable package design with advanced packaging and silicon combination for low rDS(on).
Compliant with RoHS
FDMS3662 Applications
DC - DC Con version
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