FDMS3016DC

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Rise Time :

3ns

Width :

5.85mm

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

2 ns

JEDEC-95 Code :

MO-240AA

Avalanche Energy Rating (Eas) :

72 mJ

Element Configuration :

Single

JESD-30 Code :

R-PDSO-F5

Vgs (Max) :

±20V

Series :

Dual Cool™, PowerTrench®

Drain Current-Max (Abs) (ID) :

49A

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Flat

Pulsed Drain Current-Max (IDM) :

200A

Number of Pins :

8

JESD-609 Code :

e3

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 weeks ago)

Mounting Type :

Surface Mount

Power Dissipation :

60W

Power Dissipation-Max :

3.3W Ta 60W Tc

FET Type :

N-Channel

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Mount :

Surface Mount

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Additional Feature :

ULTRA LOW RESISTANCE

Package / Case :

8-PowerTDFN

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

19 ns

Terminal Finish :

Tin (Sn)

Number of Terminations :

5

Current - Continuous Drain (Id) @ 25°C :

18A Ta 49A Tc

Drain-source On Resistance-Max :

0.006Ohm

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain to Source Breakdown Voltage :

30V

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

18A

Published :

2006

RoHS Status :

RoHS Compliant

Weight :

90mg

Input Capacitance (Ciss) (Max) @ Vds :

1385pF @ 15V

Rds On (Max) @ Id, Vgs :

6m Ω @ 12A, 10V

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Case Connection :

DRAIN

Turn On Delay Time :

9 ns

Height :

1.05mm

Number of Elements :

1

Length :

5.1mm