FDMS3016DC

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Mfr.Part #
FDMS3016DC
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 30V 18A/49A DLCOOL56
Stock
18,263
In Stock :
18,263

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Weight :
90mg
Mount :
Surface Mount
Drain-source On Resistance-Max :
0.006Ohm
Width :
5.85mm
Gate Charge (Qg) (Max) @ Vgs :
23nC @ 10V
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
6m Ω @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds :
1385pF @ 15V
Turn-Off Delay Time :
19 ns
Vgs(th) (Max) @ Id :
3V @ 250µA
Case Connection :
DRAIN
Operating Temperature :
-55°C~150°C TJ
Operating Mode :
ENHANCEMENT MODE
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 2 weeks ago)
Published :
2006
Height :
1.05mm
Current - Continuous Drain (Id) @ 25°C :
18A Ta 49A Tc
RoHS Status :
RoHS Compliant
Drain Current-Max (Abs) (ID) :
49A
Transistor Element Material :
SILICON
Series :
Dual Cool™, PowerTrench®
Package / Case :
8-PowerTDFN
Power Dissipation-Max :
3.3W Ta 60W Tc
FET Type :
N-Channel
Mounting Type :
Surface Mount
JESD-30 Code :
R-PDSO-F5
Number of Terminations :
5
Terminal Finish :
Tin (Sn)
Additional Feature :
ULTRA LOW RESISTANCE
Radiation Hardening :
No
JEDEC-95 Code :
MO-240AA
JESD-609 Code :
e3
Terminal Form :
Flat
Pulsed Drain Current-Max (IDM) :
200A
Packaging :
Tape and Reel (TR)
Number of Pins :
8
Element Configuration :
Single
Length :
5.1mm
Gate to Source Voltage (Vgs) :
20V
Number of Elements :
1
Drain to Source Breakdown Voltage :
30V
Turn On Delay Time :
9 ns
Rise Time :
3ns
Continuous Drain Current (ID) :
18A
ECCN Code :
EAR99
Avalanche Energy Rating (Eas) :
72 mJ
Pbfree Code :
yes
Vgs (Max) :
±20V
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time (Typ) :
2 ns
Power Dissipation :
60W
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMS3016DC from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:8-PowerTDFN, Mounting Type:Surface Mount, Number of Terminations:5, Number of Pins:8, FDMS3016DC pinout, FDMS3016DC datasheet PDF, FDMS3016DC amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMS3016DC ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS3016DC


N-Channel Tape & Reel (TR) 6m Ω @ 12A, 10V ±20V 1385pF @ 15V 23nC @ 10V 8-PowerTDFN

FDMS3016DC Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 72 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 1385pF @ 15V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 18A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=30V. And this device has 30V drain to source breakdown voltage.The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 49A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 19 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 200A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 9 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

FDMS3016DC Features


the avalanche energy rating (Eas) is 72 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 19 ns
based on its rated peak drain current 200A.


FDMS3016DC Applications


There are a lot of ON Semiconductor
FDMS3016DC applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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