FDMS1D4N03S

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Mfr.Part #
FDMS1D4N03S
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 30V 211A 8PQFN
Stock
1,812
In Stock :
1,812

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Surface Mount
Power Dissipation-Max :
74W Tc
Gate Charge (Qg) (Max) @ Vgs :
65nC @ 4.5V
Operating Temperature :
-55°C~150°C TJ
Reach Compliance Code :
not_compliant
Weight :
106mg
Series :
PowerTrench®, SyncFET™
RoHS Status :
ROHS3 Compliant
Drain to Source Voltage (Vdss) :
30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Factory Lead Time :
23 Weeks
FET Feature :
Schottky Diode (Body)
Vgs(th) (Max) @ Id :
3V @ 1mA
Packaging :
Tape and Reel (TR)
Vgs (Max) :
±16V
Current - Continuous Drain (Id) @ 25°C :
211A Tc
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
FET Type :
N-Channel
Pbfree Code :
yes
Package / Case :
8-PowerTDFN
Mount :
Surface Mount
Rds On (Max) @ Id, Vgs :
1.09m Ω @ 38A, 10V
Element Configuration :
Single
Input Capacitance (Ciss) (Max) @ Vds :
10250pF @ 15V
Datasheets
FDMS1D4N03S
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMS1D4N03S from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:8-PowerTDFN, FDMS1D4N03S pinout, FDMS1D4N03S datasheet PDF, FDMS1D4N03S amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMS1D4N03S ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS1D4N03S


N-Channel Tape & Reel (TR) 1.09m Ω @ 38A, 10V ±16V 10250pF @ 15V 65nC @ 4.5V 30V 8-PowerTDFN

FDMS1D4N03S Description


The FDMS1D4N03S has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDs(on) while maintaining excellent switching performance. This FDMS1D4N03S has the added benefit of an efficient monolithic Schottky body diode. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor FDMS1D4N03S in the  Power 56 package with 74W Power dissipations.



FDMS1D4N03S Features


Max Ts(on)= 1.09 mΩ  at Vgs= 10V,Ip= 38 A

Max TDs(on)= 1.3 mΩ at Vss=4.5V,Ip=35A .

High-Performance Technology for Extremely Low「ps/on).

SyncFET TM Schottky Body Diode

100% UIL Tested

RoHS Compliant



FDMS1D4N03S Applications


Synchronous Rectifier for DC/DC Converters

Notebook Vcore/ GPU Low Side Switch

Networking Point of Load Low Side Switch

Telecom Secondary Sde Rectification


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