FDMS039N08B

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Mfr.Part #
FDMS039N08B
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 80V 19.4A/100A 8PQFN
Stock
2,940
In Stock :
2,940

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Pbfree Code :
yes
Case Connection :
DRAIN
Gate Charge (Qg) (Max) @ Vgs :
100nC @ 10V
Factory Lead Time :
7 Weeks
JESD-30 Code :
R-PDSO-F5
Packaging :
Cut Tape (CT)
Width :
6mm
Input Capacitance (Ciss) (Max) @ Vds :
7600pF @ 40V
Radiation Hardening :
No
ECCN Code :
EAR99
Number of Elements :
1
Turn-Off Delay Time :
48 ns
Terminal Form :
Flat
Mounting Type :
Surface Mount
Number of Terminations :
5
Element Configuration :
Single
Series :
PowerTrench®
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Current - Continuous Drain (Id) @ 25°C :
19.4A Ta 100A Tc
Length :
5mm
Terminal Position :
Dual
Drain-source On Resistance-Max :
0.0039Ohm
Turn On Delay Time :
42 ns
Gate to Source Voltage (Vgs) :
20V
Operating Mode :
ENHANCEMENT MODE
Terminal Finish :
Tin (Sn)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Package / Case :
8-PowerTDFN
Fall Time (Typ) :
17 ns
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Rds On (Max) @ Id, Vgs :
3.9m Ω @ 50A, 10V
Continuous Drain Current (ID) :
19.4A
Power Dissipation-Max :
2.5W Ta 104W Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Operating Temperature :
-55°C~150°C TJ
Avalanche Energy Rating (Eas) :
240 mJ
Mount :
Surface Mount
Weight :
68.1mg
JESD-609 Code :
e3
Height :
1.05mm
Number of Pins :
8
RoHS Status :
ROHS3 Compliant
Rise Time :
25ns
Pulsed Drain Current-Max (IDM) :
400A
Power Dissipation :
2.5W
JEDEC-95 Code :
MO-240AA
FET Type :
N-Channel
Drain to Source Breakdown Voltage :
80V
Vgs (Max) :
±20V
Transistor Application :
SWITCHING
Datasheets
FDMS039N08B
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMS039N08B from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Terminations:5, Package / Case:8-PowerTDFN, Operating Temperature:-55°C~150°C TJ, Number of Pins:8, FDMS039N08B pinout, FDMS039N08B datasheet PDF, FDMS039N08B amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMS039N08B ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS039N08B


N-Channel Cut Tape (CT) 3.9m Ω @ 50A, 10V ±20V 7600pF @ 40V 100nC @ 10V 8-PowerTDFN

FDMS039N08B Description

This N-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench? process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


FDMS039N08B Features

RDS(on) = 3.2 mΩ (Typ.) @ VGS = 10 V, ID = 50 A

Low FOM RDS(on) *QG

Low Reverse Recovery Charge, Qrr = 80 NC

Soft Reverse Recovery Body Diode

Enables Highly Efficiency in Synchronous Rectification

Fast Switching Speed

100% UIL Tested

RoHS Compliant


FDMS039N08B Applications

Synchronous Rectification for ATX / Server / Telecom PSU

Battery Protection Circuit

Motor drives and Uninterruptible Power Supplies


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