FDMS039N08B
- Mfr.Part #
- FDMS039N08B
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 19.4A/100A 8PQFN
- Stock
- 2,940
- In Stock :
- 2,940
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Case Connection :
- DRAIN
- Gate Charge (Qg) (Max) @ Vgs :
- 100nC @ 10V
- Factory Lead Time :
- 7 Weeks
- JESD-30 Code :
- R-PDSO-F5
- Packaging :
- Cut Tape (CT)
- Width :
- 6mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 7600pF @ 40V
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 48 ns
- Terminal Form :
- Flat
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 5
- Element Configuration :
- Single
- Series :
- PowerTrench®
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Current - Continuous Drain (Id) @ 25°C :
- 19.4A Ta 100A Tc
- Length :
- 5mm
- Terminal Position :
- Dual
- Drain-source On Resistance-Max :
- 0.0039Ohm
- Turn On Delay Time :
- 42 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Package / Case :
- 8-PowerTDFN
- Fall Time (Typ) :
- 17 ns
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Rds On (Max) @ Id, Vgs :
- 3.9m Ω @ 50A, 10V
- Continuous Drain Current (ID) :
- 19.4A
- Power Dissipation-Max :
- 2.5W Ta 104W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Avalanche Energy Rating (Eas) :
- 240 mJ
- Mount :
- Surface Mount
- Weight :
- 68.1mg
- JESD-609 Code :
- e3
- Height :
- 1.05mm
- Number of Pins :
- 8
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 25ns
- Pulsed Drain Current-Max (IDM) :
- 400A
- Power Dissipation :
- 2.5W
- JEDEC-95 Code :
- MO-240AA
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 80V
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Datasheets
- FDMS039N08B

N-Channel Cut Tape (CT) 3.9m Ω @ 50A, 10V ±20V 7600pF @ 40V 100nC @ 10V 8-PowerTDFN
FDMS039N08B Description
This N-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench? process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
FDMS039N08B Features
RDS(on) = 3.2 mΩ (Typ.) @ VGS = 10 V, ID = 50 A
Low FOM RDS(on) *QG
Low Reverse Recovery Charge, Qrr = 80 NC
Soft Reverse Recovery Body Diode
Enables Highly Efficiency in Synchronous Rectification
Fast Switching Speed
100% UIL Tested
RoHS Compliant
FDMS039N08B Applications
Synchronous Rectification for ATX / Server / Telecom PSU
Battery Protection Circuit
Motor drives and Uninterruptible Power Supplies
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