FDMS037N08B

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 50A, 10V

Power Dissipation :

830mW

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Turn On Delay Time :

34.9 ns

Drain-source On Resistance-Max :

0.0037Ohm

Drain to Source Breakdown Voltage :

75V

ECCN Code :

EAR99

Case Connection :

DRAIN

Mounting Type :

Surface Mount

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4.5V @ 250μA

RoHS Status :

ROHS3 Compliant

Number of Terminations :

5

Reach Compliance Code :

not_compliant

JEDEC-95 Code :

MO-240AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Pbfree Code :

yes

Continuous Drain Current (ID) :

100A

Length :

5.1mm

Number of Pins :

8

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

JESD-30 Code :

R-PDSO-F5

Package / Case :

8-PowerTDFN

Turn-Off Delay Time :

55.3 ns

Power Dissipation-Max :

830mW Ta 104.2W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

1.05mm

Series :

PowerTrench®

Input Capacitance (Ciss) (Max) @ Vds :

5915pF @ 37.5V

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Terminal Form :

Flat

Published :

2013

Number of Elements :

1

FET Type :

N-Channel

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

Width :

6.25mm

Transistor Element Material :

SILICON

Terminal Position :

Dual

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

18 Weeks

Weight :

68.1mg

Feedback Cap-Max (Crss) :

45 pF

Operating Temperature :

-55°C~150°C TJ