FDMS0312S
- Mfr.Part #
- FDMS0312S
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 3,814
- In Stock :
- 3,814
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 5mm
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Rise Time :
- 5ns
- Turn-Off Delay Time :
- 28 ns
- Turn On Delay Time :
- 12 ns
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 74mg
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 2820pF @ 15V
- Mount :
- Surface Mount
- Height :
- 1.05mm
- Factory Lead Time :
- 26 Weeks
- Pulsed Drain Current-Max (IDM) :
- 90A
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Terminal Position :
- Dual
- Avalanche Energy Rating (Eas) :
- 60 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 19A Ta 42A Tc
- Case Connection :
- DRAIN
- Number of Terminations :
- 5
- Width :
- 6mm
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 4.9m Ω @ 18A, 10V
- Power Dissipation-Max :
- 2.5W Ta 46W Tc
- Power Dissipation :
- 2.5W
- JEDEC-95 Code :
- MO-240AA
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- 8-PowerTDFN
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Series :
- PowerTrench®, SyncFET™
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Drain-source On Resistance-Max :
- 0.0044Ohm
- Fall Time (Typ) :
- 4 ns
- Number of Pins :
- 8
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Breakdown Voltage :
- 30V
- Continuous Drain Current (ID) :
- 19A
- Terminal Form :
- Flat
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- JESD-609 Code :
- e3
- JESD-30 Code :
- R-PDSO-F5
- FET Type :
- N-Channel
- Pbfree Code :
- yes
- Datasheets
- FDMS0312S
FDMS0312S Documents

N-Channel Tape & Reel (TR) 4.9m Ω @ 18A, 10V ±20V 2820pF @ 15V 46nC @ 10V 8-PowerTDFN
FDMS0312S Description
With a voltage of 30V, the FDMS0312S is an N-channel Power MOSFET from ON Semiconductor. The FDMS0312S has a working temperature of -55°C to 150°C TJ and maximum power dissipation of 2.5W. The FDMS0312S was created with the goal of reducing power conversion losses. The lowest rDS(on) while maintaining great switching performance has been achieved by combining advances in both semiconductor and packaging technology. This device also has a monolithic Schottky body diode, which is very efficient.
FDMS0312S Features
-
Max rDS(on) = 4.4 mΩ at VGS = 10 V, ID = 18 A
-
Max rDS(on) = 5.8 mΩ at VGS = 4.5 V, ID = 14 A
-
Advanced Package and Silicon combination for low rDS(on)and high efficiency
-
SyncFET Schottky Body Diode
-
MSL1 robust package design
-
100% UIL tested
-
RoHS Compliant
FDMS0312S Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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