FDMS0312S
- Mfr.Part #
- FDMS0312S
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 3,814
- In Stock :
- 3,814
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JEDEC-95 Code :
- MO-240AA
- Number of Pins :
- 8
- Length :
- 5mm
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 19A Ta 42A Tc
- Mount :
- Surface Mount
- Power Dissipation-Max :
- 2.5W Ta 46W Tc
- Turn On Delay Time :
- 12 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Element Configuration :
- Single
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 19A
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Dual
- Drain-source On Resistance-Max :
- 0.0044Ohm
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 5ns
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 26 Weeks
- Height :
- 1.05mm
- Power Dissipation :
- 2.5W
- Contact Plating :
- Tin
- Width :
- 6mm
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Pulsed Drain Current-Max (IDM) :
- 90A
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Avalanche Energy Rating (Eas) :
- 60 mJ
- Package / Case :
- 8-PowerTDFN
- JESD-30 Code :
- R-PDSO-F5
- Weight :
- 74mg
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Drain to Source Breakdown Voltage :
- 30V
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 4.9m Ω @ 18A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2820pF @ 15V
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Terminal Form :
- Flat
- Fall Time (Typ) :
- 4 ns
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 5
- Series :
- PowerTrench®, SyncFET™
- Turn-Off Delay Time :
- 28 ns
- Datasheets
- FDMS0312S

N-Channel Tape & Reel (TR) 4.9m Ω @ 18A, 10V ±20V 2820pF @ 15V 46nC @ 10V 8-PowerTDFN
FDMS0312S Description
With a voltage of 30V, the FDMS0312S is an N-channel Power MOSFET from ON Semiconductor. The FDMS0312S has a working temperature of -55°C to 150°C TJ and maximum power dissipation of 2.5W. The FDMS0312S was created with the goal of reducing power conversion losses. The lowest rDS(on) while maintaining great switching performance has been achieved by combining advances in both semiconductor and packaging technology. This device also has a monolithic Schottky body diode, which is very efficient.
FDMS0312S Features
-
Max rDS(on) = 4.4 mΩ at VGS = 10 V, ID = 18 A
-
Max rDS(on) = 5.8 mΩ at VGS = 4.5 V, ID = 14 A
-
Advanced Package and Silicon combination for low rDS(on)and high efficiency
-
SyncFET Schottky Body Diode
-
MSL1 robust package design
-
100% UIL tested
-
RoHS Compliant
FDMS0312S Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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