FDMS0310S

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Mfr.Part #
FDMS0310S
Manufacturer
onsemi
Package / Case
8-PowerTDFN
Datasheet
Download
Description
MOSFET N-CH 30V 19A/42A 8PQFN
Stock
12,329
In Stock :
12,329

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Width :
5mm
Operating Mode :
ENHANCEMENT MODE
JESD-609 Code :
e3
Number of Pins :
8
Transistor Application :
SWITCHING
Number of Terminations :
5
Element Configuration :
Single
Terminal Position :
Dual
Number of Channels :
2
Turn-Off Delay Time :
28 ns
Terminal Finish :
Tin (Sn)
Pbfree Code :
yes
Gate to Source Voltage (Vgs) :
20V
ECCN Code :
EAR99
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Pulsed Drain Current-Max (IDM) :
90A
Published :
2006
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Weight :
68.1mg
Factory Lead Time :
18 Weeks
Vgs(th) (Max) @ Id :
3V @ 1mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temperature :
-55°C~150°C TJ
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Height :
1mm
FET Type :
N-Channel
Avalanche Energy Rating (Eas) :
60 mJ
Mount :
Surface Mount
Transistor Element Material :
SILICON
Terminal Form :
Flat
Rds On (Max) @ Id, Vgs :
4m Ω @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C :
19A Ta 42A Tc
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Reach Compliance Code :
not_compliant
Case Connection :
DRAIN
Power Dissipation-Max :
2.5W Ta 46W Tc
Drain Current-Max (Abs) (ID) :
19A
Mounting Type :
Surface Mount
Vgs (Max) :
±20V
DS Breakdown Voltage-Min :
30V
Gate Charge (Qg) (Max) @ Vgs :
46nC @ 10V
Number of Elements :
1
Drain-source On Resistance-Max :
0.004ohm
Continuous Drain Current (ID) :
42A
JESD-30 Code :
R-PDSO-F5
Length :
6mm
Package / Case :
8-PowerTDFN
Packaging :
Tape and Reel (TR)
RoHS Status :
ROHS3 Compliant
Series :
PowerTrench®, SyncFET™
Rise Time :
5ns
Input Capacitance (Ciss) (Max) @ Vds :
2820pF @ 15V
Drain to Source Voltage (Vdss) :
30V
Fall Time (Typ) :
4 ns
Turn On Delay Time :
12 ns
Datasheets
FDMS0310S
Introducing Transistors - FETs, MOSFETs - Single onsemi FDMS0310S from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:8, Number of Terminations:5, Number of Channels:2, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:8-PowerTDFN, FDMS0310S pinout, FDMS0310S datasheet PDF, FDMS0310S amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDMS0310S ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDMS0310S


N-Channel Tape & Reel (TR) 4m Ω @ 18A, 10V ±20V 2820pF @ 15V 46nC @ 10V 30V 8-PowerTDFN

FDMS0310S Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 60 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2820pF @ 15V.This device conducts a continuous drain current (ID) of 42A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 19A.When the device is turned off, a turn-off delay time of 28 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 90A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 12 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 30V.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

FDMS0310S Features


the avalanche energy rating (Eas) is 60 mJ
a continuous drain current (ID) of 42A
the turn-off delay time is 28 ns
based on its rated peak drain current 90A.
a 30V drain to source voltage (Vdss)


FDMS0310S Applications


There are a lot of ON Semiconductor
FDMS0310S applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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