FDMS0310AS
- Mfr.Part #
- FDMS0310AS
- Manufacturer
- onsemi
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 19A/22A 8PQFN
- Stock
- 31,620
- In Stock :
- 31,620
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 33 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 2280pF @ 15V
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 26 Weeks
- Terminal Form :
- Flat
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JEDEC-95 Code :
- MO-240AA
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 25 ns
- Vgs (Max) :
- ±20V
- Reach Compliance Code :
- not_compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Packaging :
- Tape and Reel (TR)
- Continuous Drain Current (ID) :
- 22A
- Mount :
- Surface Mount
- Rise Time :
- 3.9ns
- Power Dissipation-Max :
- 2.5W Ta 41W Tc
- JESD-30 Code :
- R-PDSO-F5
- Terminal Position :
- Dual
- Pulsed Drain Current-Max (IDM) :
- 100A
- Turn On Delay Time :
- 9 ns
- Drain to Source Breakdown Voltage :
- 30V
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Series :
- PowerTrench®, SyncFET™
- Terminal Finish :
- Tin (Sn)
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Weight :
- 74mg
- Rds On (Max) @ Id, Vgs :
- 4.3m Ω @ 19A, 10V
- Package / Case :
- 8-PowerTDFN
- Current - Continuous Drain (Id) @ 25°C :
- 19A Ta 22A Tc
- Case Connection :
- DRAIN
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain Current-Max (Abs) (ID) :
- 19A
- Gate Charge (Qg) (Max) @ Vgs :
- 37nC @ 10V
- JESD-609 Code :
- e3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Fall Time (Typ) :
- 3.2 ns
- Number of Pins :
- 8
- Element Configuration :
- Single
- Number of Terminations :
- 5
- Drain-source On Resistance-Max :
- 0.0043Ohm
- Datasheets
- FDMS0310AS
FDMS0310AS Documents

N-Channel Tape & Reel (TR) 4.3m Ω @ 19A, 10V ±20V 2280pF @ 15V 37nC @ 10V 8-PowerTDFN
FDMS0310AS Description
The FDMS0310AS has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
FDMS0310AS Features
Max rDS(on) = 4.3 m? at VGS = 10 V, ID = 19 A
Max rDS(on) = 5.2 m? at VGS = 4.5 V, ID = 17 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
SyncFETTM Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant
FDMS0310AS Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/GPU low-side switch
Networking Point of Load low-side switch
Telecom secondary side rectification
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The basic freight (for package ≤0.5 KG ) depends on the time zones and countries
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