FDMS0309AS
- Mfr.Part #
- FDMS0309AS
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 8-PowerTDFN
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 2
- Stock
- 1,918
- In Stock :
- 1,918
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Flat
- Number of Channels :
- 1
- JEDEC-95 Code :
- MO-240AA
- Turn On Delay Time :
- 11 ns
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Mount :
- Surface Mount
- Terminal Position :
- Dual
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.0035Ohm
- Rise Time :
- 4.5ns
- Series :
- PowerTrench®, SyncFET™
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 29 ns
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 3000pF @ 15V
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 5
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Continuous Drain Current (ID) :
- 49A
- Avalanche Energy Rating (Eas) :
- 66 mJ
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Case Connection :
- DRAIN
- Drain to Source Breakdown Voltage :
- 30V
- JESD-30 Code :
- R-PDSO-F5
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 3.7 ns
- Factory Lead Time :
- 18 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 21A Ta 49A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 47nC @ 10V
- Package / Case :
- 8-PowerTDFN
- Transistor Element Material :
- SILICON
- Number of Pins :
- 8
- Weight :
- 68.1mg
- Power Dissipation-Max :
- 2.5W Ta 50W Tc
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 3.5m Ω @ 21A, 10V
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 2.5W
- Gate to Source Voltage (Vgs) :
- 20V
- Reach Compliance Code :
- not_compliant
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- FDMS0309AS

N-Channel Tape & Reel (TR) 3.5m Ω @ 21A, 10V ±20V 3000pF @ 15V 47nC @ 10V 8-PowerTDFN
The FDMS0309AS has been designed to minimize losses in power conversion application. The lowest rDS(on) while maintaining great switching performance has been achieved by combining advances in both semiconductor and packaging technology. This device also has a monolithic Schottky body diode, which is very efficient.
FDMS0309AS Features
MSL1 Robust Package Design
100% UIL tested
RoHS Compliant
Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 21 A
Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A
Advanced package and silicon combination for low rDS(on) and high efficiency
SyncFET Schottky Body Diode
FDMS0309AS Applications
Synchrounous Rectifier for DC/DC Converters
Notebook Vcore/GPU Low Side Switch
Networking Point of Load Low Side Switch
Telecom Secondary Side Rectification
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