FDL100N50F

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Max Junction Temperature (Tj) :

150°C

Element Configuration :

Single

Pbfree Code :

yes

Vgs (Max) :

±30V

Number of Elements :

1

Rise Time :

186ns

REACH SVHC :

No SVHC

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Channels :

1

Drain-source On Resistance-Max :

0.055Ohm

Avalanche Energy Rating (Eas) :

5000 mJ

Package / Case :

TO-264-3, TO-264AA

Terminal Finish :

Tin (Sn)

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

238nC @ 10V

RoHS Status :

ROHS3 Compliant

Published :

2013

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

8 Weeks

Threshold Voltage :

3V

Rds On (Max) @ Id, Vgs :

55m Ω @ 50A, 10V

Pulsed Drain Current-Max (IDM) :

400A

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Series :

UniFET™

Number of Terminations :

3

Weight :

6.756g

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Length :

20mm

Continuous Drain Current (ID) :

100A

Input Capacitance (Ciss) (Max) @ Vds :

12000pF @ 25V

Packaging :

Tube

FET Type :

N-Channel

Turn-Off Delay Time :

202 ns

Number of Pins :

3

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Through Hole

Power Dissipation :

2.5kW

Turn On Delay Time :

63 ns

JESD-609 Code :

e3

Width :

5mm

Height :

29mm

Fall Time (Typ) :

105 ns

Mount :

Through Hole

Power Dissipation-Max :

2500W Tc

Drain to Source Breakdown Voltage :

500V

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30