FDI8442

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Power Dissipation-Max :

254W Tc

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Avalanche Energy Rating (Eas) :

720 mJ

JEDEC-95 Code :

TO-262AB

Drain to Source Voltage (Vdss) :

40V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

Unknown

Input Capacitance (Ciss) (Max) @ Vds :

12.2pF @ 25V

DS Breakdown Voltage-Min :

40V

Surface Mount :

No

Pin Count :

3

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSIP-T3

Series :

PowerTrench®

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

23A Ta 80A Tc

Terminal Position :

Single

Packaging :

Tube

Drain-source On Resistance-Max :

0.0029Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

2.9m Ω @ 80A, 10V

Gate Charge (Qg) (Max) @ Vgs :

235nC @ 10V

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

23A

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA

Qualification Status :

COMMERCIAL