FDH44N50
- Mfr.Part #
- FDH44N50
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 44A TO247-3
- Stock
- 67
- In Stock :
- 67
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Transistor Application :
- SWITCHING
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Resistance :
- 120mOhm
- Current Rating :
- 44A
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Dual Supply Voltage :
- 500V
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Length :
- 15.87mm
- Vgs (Max) :
- ±30V
- Power Dissipation-Max :
- 750W Tc
- Width :
- 4.82mm
- Voltage - Rated DC :
- 500V
- Fall Time (Typ) :
- 79 ns
- Power Dissipation :
- 750W
- Published :
- 2013
- Terminal Finish :
- Tin (Sn)
- Height :
- 20.82mm
- Number of Terminations :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 108nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 120m Ω @ 22A, 10V
- Number of Pins :
- 3
- Weight :
- 6.39g
- Drain to Source Breakdown Voltage :
- 500V
- Radiation Hardening :
- No
- Factory Lead Time :
- 7 Weeks
- Termination :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 5335pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- Nominal Vgs :
- 3.15 V
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Threshold Voltage :
- 3.15V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 44A
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 45 ns
- Case Connection :
- DRAIN
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Temperature :
- -55°C~175°C TJ
- Package / Case :
- TO-247-3
- Rise Time :
- 84ns
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 16 ns
- Datasheets
- FDH44N50
FDH44N50 Documents

N-Channel Tube 120m Ω @ 22A, 10V ±30V 5335pF @ 25V 108nC @ 10V TO-247-3
FDH44N50 Description
FDH44N50 MOSFET is based on established silicon processes that provide designers with an extensive range of devices. FDH44N50 datasheet available in a range of through-hole and surface-mount packaging with standard footprints to facilitate designing. ON Semiconductor FDH44N50 is used in power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
FDH44N50 Features
Improved Gate, avalanche and high reapplied dv/dt ruggedness
Low gate charge Qg results in simple drive requirement
Reduced RDS(on)
Improved switching speed with low EMI
Reduced Miller capacitance and low Input capacitance
FDH44N50 Applications
Power factor correction
Electronic lamp ballasts
Flat panel display
TV power
ATX
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