FDH44N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Weight :

6.39g

Rds On (Max) @ Id, Vgs :

120m Ω @ 22A, 10V

Dual Supply Voltage :

500V

Voltage - Rated DC :

500V

Turn-Off Delay Time :

45 ns

Packaging :

Tube

Drain to Source Breakdown Voltage :

500V

Input Capacitance (Ciss) (Max) @ Vds :

5335pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Lead Free :

Lead Free

Radiation Hardening :

No

Number of Terminations :

3

Published :

2013

Power Dissipation :

750W

REACH SVHC :

No SVHC

Resistance :

120mOhm

Fall Time (Typ) :

79 ns

Continuous Drain Current (ID) :

44A

Mount :

Through Hole

Pbfree Code :

yes

Length :

15.87mm

Width :

4.82mm

Gate to Source Voltage (Vgs) :

30V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

7 Weeks

Vgs(th) (Max) @ Id :

4V @ 250µA

Threshold Voltage :

3.15V

JESD-609 Code :

e3

Turn On Delay Time :

16 ns

Rise Time :

84ns

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

20.82mm

Transistor Application :

SWITCHING

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Power Dissipation-Max :

750W Tc

Element Configuration :

Single

Transistor Element Material :

SILICON

Current Rating :

44A

Package / Case :

TO-247-3

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Case Connection :

DRAIN

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

108nC @ 10V

Termination :

Through Hole

Nominal Vgs :

3.15 V

Current - Continuous Drain (Id) @ 25°C :

44A Tc