FDH038AN08A1
- Mfr.Part #
- FDH038AN08A1
- Manufacturer
- onsemi
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 22A/80A TO247-3
- Stock
- 2,613
- In Stock :
- 2,613
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Drain Current-Max (Abs) (ID) :
- 22A
- Width :
- 4.82mm
- Current - Continuous Drain (Id) @ 25°C :
- 22A Ta 80A Tc
- Rds On (Max) @ Id, Vgs :
- 3.8m Ω @ 80A, 10V
- Continuous Drain Current (ID) :
- 80A
- Series :
- PowerTrench®
- Turn-Off Delay Time :
- 232 ns
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Power Dissipation :
- 450W
- Length :
- 15.87mm
- Lead Free :
- Lead Free
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Turn On Delay Time :
- 88 ns
- Operating Mode :
- ENHANCEMENT MODE
- Voltage - Rated DC :
- 75V
- Packaging :
- Tube
- Weight :
- 6.39g
- Operating Temperature :
- -55°C~175°C TJ
- Factory Lead Time :
- 4 Weeks
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Current Rating :
- 80A
- Fall Time (Typ) :
- 126 ns
- Height :
- 20.82mm
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rise Time :
- 141ns
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-247-3
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 160nC @ 10V
- Power Dissipation-Max :
- 450W Tc
- Drain to Source Breakdown Voltage :
- 75V
- Mount :
- Through Hole
- Published :
- 2013
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 8665pF @ 25V
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Datasheets
- FDH038AN08A1

N-Channel Tube 3.8m Ω @ 80A, 10V ±20V 8665pF @ 25V 160nC @ 10V TO-247-3
FDH038AN08A1 Overview
A device's maximal input capacitance is 8665pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 80A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 75V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 22A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 232 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 88 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (6V 10V).
FDH038AN08A1 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 232 ns
FDH038AN08A1 Applications
There are a lot of ON Semiconductor
FDH038AN08A1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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