FDG410NZ

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Mfr.Part #
FDG410NZ
Manufacturer
onsemi
Package / Case
6-TSSOP, SC-88, SOT-363
Datasheet
Download
Description
MOSFET N-CH 20V 2.2A SC88
Stock
87,634
In Stock :
87,634

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Rds On (Max) @ Id, Vgs :
70m Ω @ 2.2A, 4.5V
Weight :
28mg
Terminal Finish :
Tin (Sn)
JESD-609 Code :
e3
Operating Mode :
ENHANCEMENT MODE
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Vgs(th) (Max) @ Id :
1V @ 250μA
Element Configuration :
Single
Turn On Delay Time :
5.3 ns
Pbfree Code :
yes
Input Capacitance (Ciss) (Max) @ Vds :
535pF @ 10V
Mount :
Surface Mount
Factory Lead Time :
10 Weeks
Vgs (Max) :
±8V
Package / Case :
6-TSSOP, SC-88, SOT-363
Number of Terminations :
6
Turn-Off Delay Time :
18 ns
Lead Free :
Lead Free
Qualification Status :
Not Qualified
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Rise Time :
2.3ns
Transistor Application :
SWITCHING
Mounting Type :
Surface Mount
Operating Temperature :
-55°C~150°C TJ
ECCN Code :
EAR99
Drain to Source Breakdown Voltage :
20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
420mW
Terminal Form :
Gull wing
Current - Continuous Drain (Id) @ 25°C :
2.2A Ta
Series :
PowerTrench®
Gate to Source Voltage (Vgs) :
8V
FET Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Packaging :
Tape and Reel (TR)
Drive Voltage (Max Rds On,Min Rds On) :
1.5V 4.5V
Gate Charge (Qg) (Max) @ Vgs :
7.2nC @ 4.5V
Power Dissipation-Max :
420mW Ta
Number of Elements :
1
Resistance :
70mOhm
Terminal Position :
Dual
Transistor Element Material :
SILICON
Continuous Drain Current (ID) :
2.2A
Number of Pins :
6
Feedback Cap-Max (Crss) :
70 pF
Datasheets
FDG410NZ
Introducing Transistors - FETs, MOSFETs - Single onsemi FDG410NZ from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:6-TSSOP, SC-88, SOT-363, Number of Terminations:6, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Pins:6, FDG410NZ pinout, FDG410NZ datasheet PDF, FDG410NZ amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDG410NZ ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDG410NZ


N-Channel Tape & Reel (TR) 70m Ω @ 2.2A, 4.5V ±8V 535pF @ 10V 7.2nC @ 4.5V 6-TSSOP, SC-88, SOT-363

FDG410NZ Description


This N-Channel MOSFET was created with the goal of increasing the overall efficiency of DC/DC converters using synchronous or traditional switching PWM controllers. It's been designed specifically for use in compact switching regulators, with extremely low rDS(on) and gate charge (Qg) in a small package. The operating temperature of FDG410NZ is -55°C~150°C TJ and its maximum power dissipation is 420mW Ta.



FDG410NZ Features


  • Max rDS(on) = 70 mΩ at VGS = 4.5 V, ID = 2.2 A

  • Max rDS(on) = 77 mΩ at VGS = 2.5 V, ID = 2.0 A

  • Max rDS(on) = 87 mΩ at VGS = 1.8 V, ID = 1.8 A

  • Max rDS(on) = 115 mΩ at VGS = 1.5 V, ID = 1.5 A

  • HBM ESD protection level > 2 kV (Note 3)

  • High performance trench technology for extremely low rDS(on)

  • High power and current handling capability

  • Fast switching speed

  • Low gate charge

  • RoHS compliant



FDG410NZ Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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FDG410NZ onsemi 87,634 MOSFET N-CH 20V 2.2A SC88
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