FDG410NZ
- Mfr.Part #
- FDG410NZ
- Manufacturer
- onsemi
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 2.2A SC88
- Stock
- 87,634
- In Stock :
- 87,634
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 70m Ω @ 2.2A, 4.5V
- Weight :
- 28mg
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Element Configuration :
- Single
- Turn On Delay Time :
- 5.3 ns
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 535pF @ 10V
- Mount :
- Surface Mount
- Factory Lead Time :
- 10 Weeks
- Vgs (Max) :
- ±8V
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Number of Terminations :
- 6
- Turn-Off Delay Time :
- 18 ns
- Lead Free :
- Lead Free
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Rise Time :
- 2.3ns
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Drain to Source Breakdown Voltage :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 420mW
- Terminal Form :
- Gull wing
- Current - Continuous Drain (Id) @ 25°C :
- 2.2A Ta
- Series :
- PowerTrench®
- Gate to Source Voltage (Vgs) :
- 8V
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Packaging :
- Tape and Reel (TR)
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4.5V
- Gate Charge (Qg) (Max) @ Vgs :
- 7.2nC @ 4.5V
- Power Dissipation-Max :
- 420mW Ta
- Number of Elements :
- 1
- Resistance :
- 70mOhm
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 2.2A
- Number of Pins :
- 6
- Feedback Cap-Max (Crss) :
- 70 pF
- Datasheets
- FDG410NZ

N-Channel Tape & Reel (TR) 70m Ω @ 2.2A, 4.5V ±8V 535pF @ 10V 7.2nC @ 4.5V 6-TSSOP, SC-88, SOT-363
FDG410NZ Description
This N-Channel MOSFET was created with the goal of increasing the overall efficiency of DC/DC converters using synchronous or traditional switching PWM controllers. It's been designed specifically for use in compact switching regulators, with extremely low rDS(on) and gate charge (Qg) in a small package. The operating temperature of FDG410NZ is -55°C~150°C TJ and its maximum power dissipation is 420mW Ta.
FDG410NZ Features
-
Max rDS(on) = 70 mΩ at VGS = 4.5 V, ID = 2.2 A
-
Max rDS(on) = 77 mΩ at VGS = 2.5 V, ID = 2.0 A
-
Max rDS(on) = 87 mΩ at VGS = 1.8 V, ID = 1.8 A
-
Max rDS(on) = 115 mΩ at VGS = 1.5 V, ID = 1.5 A
-
HBM ESD protection level > 2 kV (Note 3)
-
High performance trench technology for extremely low rDS(on)
-
High power and current handling capability
-
Fast switching speed
-
Low gate charge
-
RoHS compliant
FDG410NZ Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FDG410NZ | onsemi | 87,634 | MOSFET N-CH 20V 2.2A SC88 |
















