FDC5661N-F085

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

3V @ 250µA

Drain to Source Voltage (Vdss) :

60V

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

763pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

1.6W Ta

DS Breakdown Voltage-Min :

60V

JESD-30 Code :

R-PDSO-G6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

20A

Qualification Status :

Not Qualified

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

4.3A

Number of Terminations :

6

Drain-source On Resistance-Max :

0.047Ohm

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Factory Lead Time :

26 Weeks

Series :

Automotive, AEC-Q101, PowerTrench®

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Terminal Position :

Dual

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

47m Ω @ 4.3A, 10V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

4.3A Ta

Number of Elements :

1