FDC5614P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Voltage :

60V

Number of Terminations :

6

Max Junction Temperature (Tj) :

150°C

Published :

2002

Current :

2A

Current Rating :

-3A

Resistance :

105mOhm

Number of Pins :

6

Mounting Type :

Surface Mount

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Length :

3mm

Pbfree Code :

yes

Contact Plating :

Tin

Number of Channels :

1

Radiation Hardening :

No

Element Configuration :

Single

FET Type :

P-Channel

Height :

900μm

Width :

1.7mm

Transistor Element Material :

SILICON

Factory Lead Time :

5 Weeks

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Series :

PowerTrench®

Turn-Off Delay Time :

19 ns

Rds On (Max) @ Id, Vgs :

105m Ω @ 3A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Terminal Form :

Gull wing

Rise Time :

10ns

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

3A

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

-60V

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Power Dissipation-Max :

1.6W Ta

Nominal Vgs :

-1.6 V

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Lead Free :

Lead Free

Voltage - Rated DC :

-60V

Vgs(th) (Max) @ Id :

3V @ 250µA

Current - Continuous Drain (Id) @ 25°C :

3A Ta

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Turn On Delay Time :

7 ns

Power Dissipation :

1.6W

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

759pF @ 30V

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

-1.6V

Fall Time (Typ) :

10 ns