FDC5614P
- Mfr.Part #
- FDC5614P
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 3A SUPERSOT6
- Stock
- 22,219
- In Stock :
- 22,219
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 3mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 3A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Max Junction Temperature (Tj) :
- 150°C
- Pbfree Code :
- yes
- Factory Lead Time :
- 5 Weeks
- Operating Mode :
- ENHANCEMENT MODE
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- FET Type :
- P-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Threshold Voltage :
- -1.6V
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 10V
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Nominal Vgs :
- -1.6 V
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Fall Time (Typ) :
- 10 ns
- Current - Continuous Drain (Id) @ 25°C :
- 3A Ta
- Number of Channels :
- 1
- Turn-Off Delay Time :
- 19 ns
- Drain to Source Breakdown Voltage :
- -60V
- Width :
- 1.7mm
- Series :
- PowerTrench®
- Voltage - Rated DC :
- -60V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- RoHS Status :
- ROHS3 Compliant
- Resistance :
- 105mOhm
- ECCN Code :
- EAR99
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Number of Terminations :
- 6
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 759pF @ 30V
- Power Dissipation-Max :
- 1.6W Ta
- Turn On Delay Time :
- 7 ns
- Rise Time :
- 10ns
- Vgs (Max) :
- ±20V
- Contact Plating :
- Tin
- Height :
- 900μm
- Power Dissipation :
- 1.6W
- Current Rating :
- -3A
- Rds On (Max) @ Id, Vgs :
- 105m Ω @ 3A, 10V
- Number of Pins :
- 6
- Published :
- 2002
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Current :
- 2A
- Voltage :
- 60V
- Lead Free :
- Lead Free
- Terminal Position :
- Dual
- Datasheets
- FDC5614P

P-Channel Tape & Reel (TR) 105m Ω @ 3A, 10V ±20V 759pF @ 30V 24nC @ 10V SOT-23-6 Thin, TSOT-23-6
FDC5614P Description
This 60V P-Channel MOSFET uses ON Semiconductor's high voltage PowerTrench process. It has been optimized for power management applications.
FDC5614P Features
-
Fast switching speed
-
High performance trench technology for extremely low RDS(ON)
-
Continuous Drain Current (ID): 3 A
-
Turn-Off Delay Time: 19 ns
-
ROHS3 Compliant
-
No SVHC
-
Lead Free
FDC5614P Applications
-
DC-DC converters
-
Load switch
-
Power management
-
New Energy Vehicle
-
Photovoltaic Generation
-
Wind Power Generation
-
Smart Grid
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