FDC5612

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Mfr.Part #
FDC5612
Manufacturer
onsemi
Package / Case
SOT-23-6 Thin, TSOT-23-6
Datasheet
Download
Description
MOSFET N-CH 60V 4.3A SUPERSOT6
Stock
147,065
In Stock :
147,065

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Radiation Hardening :
No
Power Dissipation :
1.6W
Published :
1999
Input Capacitance (Ciss) (Max) @ Vds :
650pF @ 25V
Rise Time :
8ns
Number of Channels :
1
Power Dissipation-Max :
1.6W Ta
Packaging :
Tape and Reel (TR)
Number of Pins :
6
Length :
3mm
Height :
1.1mm
Mounting Type :
Surface Mount
Turn-Off Delay Time :
19 ns
Current Rating :
4.3A
Element Configuration :
Single
Turn On Delay Time :
11 ns
Mount :
Surface Mount
Factory Lead Time :
5 Weeks
Weight :
36mg
Threshold Voltage :
2.2V
Voltage - Rated DC :
60V
Lead Free :
Lead Free
Drive Voltage (Max Rds On,Min Rds On) :
6V 10V
JESD-609 Code :
e3
Dual Supply Voltage :
60V
Current - Continuous Drain (Id) @ 25°C :
4.3A Ta
Drain to Source Breakdown Voltage :
60V
Terminal Position :
Dual
FET Type :
N-Channel
Max Junction Temperature (Tj) :
150°C
Terminal Form :
Gull wing
Operating Temperature :
-55°C~150°C TJ
Pbfree Code :
yes
REACH SVHC :
No SVHC
Series :
PowerTrench®
Transistor Element Material :
SILICON
Number of Elements :
1
Gate to Source Voltage (Vgs) :
20V
Rds On (Max) @ Id, Vgs :
55m Ω @ 4.3A, 10V
Contact Plating :
Tin
Width :
1.7mm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Resistance :
55mOhm
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Vgs (Max) :
±20V
Continuous Drain Current (ID) :
4.3A
Fall Time (Typ) :
8 ns
Gate Charge (Qg) (Max) @ Vgs :
18nC @ 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Package / Case :
SOT-23-6 Thin, TSOT-23-6
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
Operating Mode :
ENHANCEMENT MODE
ECCN Code :
EAR99
Number of Terminations :
6
Introducing Transistors - FETs, MOSFETs - Single onsemi FDC5612 from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Number of Pins:6, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:SOT-23-6 Thin, TSOT-23-6, Number of Terminations:6, FDC5612 pinout, FDC5612 datasheet PDF, FDC5612 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDC5612 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDC5612


N-Channel Tape & Reel (TR) 55m Ω @ 4.3A, 10V ±20V 650pF @ 25V 18nC @ 10V SOT-23-6 Thin, TSOT-23-6

FDC5612 Description


The FDC5612 N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.



FDC5612 Features


  • Low gate charge (12.5nC typical)

  • Fast switching speed

  • High performance trench technology for extremely low RDS(ON)

  • SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)

  • ROHS3 Compliant

  • Lead Free

  • No SVHC



FDC5612 Applications


  • Switching Application

  • New Energy Vehicle

  • Photovoltaic Generation

  • Wind Power Generation

  • Smart Grid


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