FDC5612

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

6

Operating Mode :

ENHANCEMENT MODE

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

4.3A Ta

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Factory Lead Time :

5 Weeks

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Number of Pins :

6

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Turn On Delay Time :

11 ns

Transistor Application :

SWITCHING

Power Dissipation :

1.6W

Number of Elements :

1

Terminal Form :

Gull wing

Width :

1.7mm

Series :

PowerTrench®

Lead Free :

Lead Free

Published :

1999

Input Capacitance (Ciss) (Max) @ Vds :

650pF @ 25V

Dual Supply Voltage :

60V

FET Type :

N-Channel

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Length :

3mm

Operating Temperature :

-55°C~150°C TJ

Voltage - Rated DC :

60V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Pbfree Code :

yes

Contact Plating :

Tin

Terminal Position :

Dual

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

4.3A

Number of Channels :

1

Current Rating :

4.3A

Height :

1.1mm

Rise Time :

8ns

Mount :

Surface Mount

Max Junction Temperature (Tj) :

150°C

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

2.2V

Turn-Off Delay Time :

19 ns

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Fall Time (Typ) :

8 ns

Drain to Source Breakdown Voltage :

60V

Power Dissipation-Max :

1.6W Ta

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

36mg

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

55m Ω @ 4.3A, 10V

Resistance :

55mOhm