FDC2612

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Mfr.Part #
FDC2612
Manufacturer
onsemi
Package / Case
SOT-23-6 Thin, TSOT-23-6
Datasheet
Download
Description
MOSFET N-CH 200V 1.1A SUPERSOT6
Stock
16,281
In Stock :
16,281

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Vgs (Max) :
±20V
Series :
PowerTrench®
Mounting Type :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
10V
Gate to Source Voltage (Vgs) :
20V
Current - Continuous Drain (Id) @ 25°C :
1.1A Ta
REACH SVHC :
No SVHC
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Operating Mode :
ENHANCEMENT MODE
Packaging :
Tape and Reel (TR)
Threshold Voltage :
4V
ECCN Code :
EAR99
Transistor Application :
SWITCHING
Continuous Drain Current (ID) :
1.1A
Number of Pins :
6
FET Type :
N-Channel
Contact Plating :
Tin
Input Capacitance (Ciss) (Max) @ Vds :
234pF @ 100V
Drain to Source Breakdown Voltage :
200V
Length :
3mm
Mount :
Surface Mount
Fall Time (Typ) :
6 ns
Number of Elements :
1
Vgs(th) (Max) @ Id :
4.5V @ 250μA
Resistance :
725MOhm
Qualification Status :
Not Qualified
Width :
1.7mm
Power Dissipation-Max :
1.6W Ta
Lead Free :
Lead Free
Weight :
36mg
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Factory Lead Time :
15 Weeks
Power Dissipation :
1.6W
Number of Terminations :
6
Element Configuration :
Single
Operating Temperature :
-55°C~150°C TJ
Voltage - Rated DC :
200V
Rise Time :
6ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Rds On (Max) @ Id, Vgs :
725m Ω @ 1.1A, 10V
Height :
1mm
Transistor Element Material :
SILICON
Turn-Off Delay Time :
17 ns
JESD-609 Code :
e3
Current Rating :
1.1A
Terminal Form :
Gull wing
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 10V
Terminal Position :
Dual
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Turn On Delay Time :
6 ns
Introducing Transistors - FETs, MOSFETs - Single onsemi FDC2612 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:6, Package / Case:SOT-23-6 Thin, TSOT-23-6, Number of Terminations:6, Operating Temperature:-55°C~150°C TJ, FDC2612 pinout, FDC2612 datasheet PDF, FDC2612 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FDC2612 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDC2612


N-Channel Tape & Reel (TR) 725m Ω @ 1.1A, 10V ±20V 234pF @ 100V 11nC @ 10V SOT-23-6 Thin, TSOT-23-6

FDC2612 MOSFET Description


FDC2612 is a top-notch N-Channel MOSFET adopting Onsemi's POWERTRENCH technology. As a result, this MOSFET presents excellent characteristics for high-power and high-current switching capability with extremely low on-resistance. The advanced TSOT23 package improves environment flexibility.



FDC2612 MOSFET Features


  • High-performance trench technology for extremely low RDS(ON)

  • Low gate charge (8nC typical)

  • RDS(on) = 725 mΩ@ VGS = 10 V

  • Fast switching speed

  • High power and current handling capability

  • 1.1 A, 200V



FDC2612 MOSFET  Applications


  • DC-DC converter

  • Load switch

  • LCD display inverter

  • PWM controller

  • HV technology

  • Circuit protections

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