FDC2612

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

PowerTrench®

Drain to Source Breakdown Voltage :

200V

Length :

3mm

Weight :

36mg

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Rds On (Max) @ Id, Vgs :

725m Ω @ 1.1A, 10V

Power Dissipation :

1.6W

Factory Lead Time :

15 Weeks

Voltage - Rated DC :

200V

Contact Plating :

Tin

Fall Time (Typ) :

6 ns

Number of Elements :

1

Power Dissipation-Max :

1.6W Ta

Threshold Voltage :

4V

Pbfree Code :

yes

FET Type :

N-Channel

Resistance :

725MOhm

Turn On Delay Time :

6 ns

Mount :

Surface Mount

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Number of Terminations :

6

Continuous Drain Current (ID) :

1.1A

Package / Case :

SOT-23-6 Thin, TSOT-23-6

REACH SVHC :

No SVHC

Number of Pins :

6

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Turn-Off Delay Time :

17 ns

Width :

1.7mm

Current Rating :

1.1A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Height :

1mm

ECCN Code :

EAR99

JESD-609 Code :

e3

Terminal Position :

Dual

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

1.1A Ta

Input Capacitance (Ciss) (Max) @ Vds :

234pF @ 100V

Rise Time :

6ns