FDC2512
- Mfr.Part #
- FDC2512
- Manufacturer
- onsemi
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET N-CH 150V 1.4A SUPERSOT6
- Stock
- 66
- In Stock :
- 66
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 1.7mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 344pF @ 75V
- Max Junction Temperature (Tj) :
- 150°C
- Contact Plating :
- Tin
- Turn-Off Delay Time :
- 22 ns
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Current :
- 14A
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 4 ns
- Turn On Delay Time :
- 6.5 ns
- Factory Lead Time :
- 15 Weeks
- Transistor Element Material :
- SILICON
- Current Rating :
- 1.4A
- Series :
- PowerTrench®
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 6
- Operating Mode :
- ENHANCEMENT MODE
- REACH SVHC :
- No SVHC
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Height :
- 1.1mm
- Operating Temperature :
- -55°C~150°C TJ
- Termination :
- SMD/SMT
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Power Dissipation :
- 1.6W
- Continuous Drain Current (ID) :
- 1.4A
- Mounting Type :
- Surface Mount
- Dual Supply Voltage :
- 150V
- Power Dissipation-Max :
- 1.6W Ta
- Number of Elements :
- 1
- Rise Time :
- 3.5ns
- Current - Continuous Drain (Id) @ 25°C :
- 1.4A Ta
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 150V
- Nominal Vgs :
- 2.6 V
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Published :
- 2017
- Length :
- 3mm
- Voltage - Rated DC :
- 150V
- Threshold Voltage :
- 2.6V
- ECCN Code :
- EAR99
- Terminal Position :
- Dual
- Vgs (Max) :
- ±20V
- Resistance :
- 425mOhm
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 10V
- Terminal Form :
- Gull wing
- Voltage :
- 150V
- Mount :
- Surface Mount
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Pins :
- 6
- Number of Channels :
- 1
- Element Configuration :
- Single
- Rds On (Max) @ Id, Vgs :
- 425m Ω @ 1.4A, 10V
- Datasheets
- FDC2512

N-Channel Tape & Reel (TR) 425m Ω @ 1.4A, 10V ±20V 344pF @ 75V 11nC @ 10V SOT-23-6 Thin, TSOT-23-6
FDC2512 Overview
The maximum input capacitance of this device is 344pF @ 75V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 1.4A.When VGS=150V, and ID flows to VDS at 150VVDS, the drain-source breakdown voltage is 150V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 22 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 6.5 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 2.6V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (6V 10V), this device helps reduce its power consumption.
FDC2512 Features
a continuous drain current (ID) of 1.4A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 22 ns
a threshold voltage of 2.6V
FDC2512 Applications
There are a lot of ON Semiconductor
FDC2512 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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