FDC2512

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

1.7mm

Number of Terminations :

6

Turn-Off Delay Time :

22 ns

Published :

2017

Number of Channels :

1

Lead Free :

Lead Free

Power Dissipation :

1.6W

JESD-609 Code :

e3

Length :

3mm

Threshold Voltage :

2.6V

FET Type :

N-Channel

Pbfree Code :

yes

Number of Pins :

6

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Position :

Dual

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

ECCN Code :

EAR99

Power Dissipation-Max :

1.6W Ta

Factory Lead Time :

15 Weeks

Current Rating :

1.4A

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

1.4A

Number of Elements :

1

Dual Supply Voltage :

150V

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

425m Ω @ 1.4A, 10V

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Resistance :

425mOhm

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Contact Plating :

Tin

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Current - Continuous Drain (Id) @ 25°C :

1.4A Ta

Termination :

SMD/SMT

Current :

14A

Transistor Element Material :

SILICON

Turn On Delay Time :

6.5 ns

Vgs (Max) :

±20V

Max Junction Temperature (Tj) :

150°C

Nominal Vgs :

2.6 V

Element Configuration :

Single

Voltage - Rated DC :

150V

Height :

1.1mm

Input Capacitance (Ciss) (Max) @ Vds :

344pF @ 75V

Operating Mode :

ENHANCEMENT MODE

Rise Time :

3.5ns

Transistor Application :

SWITCHING

Fall Time (Typ) :

4 ns

Voltage :

150V

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Series :

PowerTrench®

Drain to Source Breakdown Voltage :

150V

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)