FDB44N25TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

400ns

Terminal Finish :

Tin (Sn)

Case Connection :

DRAIN

Additional Feature :

FAST SWITCHING

Published :

2005

Length :

10.67mm

Series :

UniFET™

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

115 ns

Current - Continuous Drain (Id) @ 25°C :

44A Tc

FET Type :

N-Channel

Nominal Vgs :

5 V

Mount :

Surface Mount

Threshold Voltage :

5V

Factory Lead Time :

4 Weeks

Max Junction Temperature (Tj) :

150°C

Gate Charge (Qg) (Max) @ Vgs :

61nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Element Configuration :

Single

Transistor Element Material :

SILICON

REACH SVHC :

No SVHC

Height :

4.83mm

Number of Pins :

2

Number of Terminations :

2

Number of Elements :

1

Terminal Form :

Gull wing

Lifecycle Status :

ACTIVE (Last Updated: 22 hours ago)

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain to Source Breakdown Voltage :

250V

Width :

11.33mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Number of Channels :

1

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

69m Ω @ 22A, 10V

Weight :

1.31247g

Resistance :

69mOhm

Turn On Delay Time :

55 ns

Packaging :

Tape and Reel (TR)

Current Rating :

44A

Input Capacitance (Ciss) (Max) @ Vds :

2870pF @ 25V

Power Dissipation-Max :

307W Tc

Continuous Drain Current (ID) :

44A

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

85 ns

Voltage - Rated DC :

250V

Power Dissipation :

307W