FDA70N20
- Mfr.Part #
- FDA70N20
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 70A TO3PN
- Stock
- 9,346
- In Stock :
- 9,346
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Input Capacitance (Ciss) (Max) @ Vds :
- 3970pF @ 25V
- Number of Elements :
- 1
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 417W
- Operating Temperature :
- -55°C~150°C TJ
- Height :
- 20.1mm
- Weight :
- 6.401g
- FET Type :
- N-Channel
- Mount :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- Transistor Application :
- SWITCHING
- Rise Time :
- 235ns
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 35A, 10V
- Voltage - Rated DC :
- 200V
- Nominal Vgs :
- 5 V
- Current Rating :
- 70A
- Factory Lead Time :
- 7 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 86nC @ 10V
- Continuous Drain Current (ID) :
- 70A
- Package / Case :
- TO-3P-3, SC-65-3
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Pbfree Code :
- yes
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 65 ns
- Additional Feature :
- FAST SWITCHING
- Width :
- 5mm
- Terminal Finish :
- Tin (Sn)
- Radiation Hardening :
- No
- Packaging :
- Tube
- Fall Time (Typ) :
- 39 ns
- Pulsed Drain Current-Max (IDM) :
- 280A
- Published :
- 2005
- Transistor Element Material :
- SILICON
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 417W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Vgs (Max) :
- ±30V
- Resistance :
- 35mOhm
- Length :
- 15.8mm
- Turn On Delay Time :
- 71 ns
- Drain to Source Breakdown Voltage :
- 200V
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- Threshold Voltage :
- 5V
- Series :
- UniFET™
- Datasheets
- FDA70N20

N-Channel Tube 35m Ω @ 35A, 10V ±30V 3970pF @ 25V 86nC @ 10V TO-3P-3, SC-65-3
FDA70N20 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 3970pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 70A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=200V. And this device has 200V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 65 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 280A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 71 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 5V threshold voltage. By using drive voltage (10V), this device helps reduce its overall power consumption.
FDA70N20 Features
a continuous drain current (ID) of 70A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 280A.
a threshold voltage of 5V
FDA70N20 Applications
There are a lot of ON Semiconductor
FDA70N20 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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