FDA18N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

5V @ 250μA

Lead Free :

Lead Free

Turn-Off Delay Time :

95 ns

Avalanche Energy Rating (Eas) :

945 mJ

Fall Time (Typ) :

90 ns

Turn On Delay Time :

55 ns

Input Capacitance (Ciss) (Max) @ Vds :

2860pF @ 25V

Rise Time :

165ns

Continuous Drain Current (ID) :

19A

Number of Pins :

3

JESD-609 Code :

e3

Power Dissipation-Max :

239W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

REACH SVHC :

No SVHC

Number of Elements :

1

Series :

UniFET™

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Gate to Source Voltage (Vgs) :

30V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Package / Case :

TO-3P-3, SC-65-3

Published :

2014

FET Type :

N-Channel

Factory Lead Time :

7 Weeks

Drain to Source Breakdown Voltage :

500V

Resistance :

265mOhm

Mounting Type :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Length :

15.8mm

Rds On (Max) @ Id, Vgs :

265m Ω @ 9.5A, 10V

Width :

5mm

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

19A Tc

Height :

18.9mm

Radiation Hardening :

No

Threshold Voltage :

5V

Pulsed Drain Current-Max (IDM) :

76A

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Element Configuration :

Single

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Power Dissipation :

239W

Additional Feature :

FAST SWITCHING

Weight :

6.401g