FDA18N50

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

95 ns

Rds On (Max) @ Id, Vgs :

265m Ω @ 9.5A, 10V

Mounting Type :

Through Hole

FET Type :

N-Channel

Weight :

6.401g

Additional Feature :

FAST SWITCHING

Length :

15.8mm

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 10V

Lead Free :

Lead Free

Published :

2014

Number of Elements :

1

Factory Lead Time :

7 Weeks

Avalanche Energy Rating (Eas) :

945 mJ

Number of Pins :

3

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

5V @ 250μA

Continuous Drain Current (ID) :

19A

Package / Case :

TO-3P-3, SC-65-3

Pbfree Code :

yes

Terminal Finish :

Tin (Sn)

Drain to Source Breakdown Voltage :

500V

Pulsed Drain Current-Max (IDM) :

76A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Vgs (Max) :

±30V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Turn On Delay Time :

55 ns

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

19A Tc

JESD-609 Code :

e3

Element Configuration :

Single

Threshold Voltage :

5V

Series :

UniFET™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

239W

Transistor Element Material :

SILICON

Power Dissipation-Max :

239W Tc

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Rise Time :

165ns

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

90 ns

Input Capacitance (Ciss) (Max) @ Vds :

2860pF @ 25V

REACH SVHC :

No SVHC

Width :

5mm

Height :

18.9mm

Resistance :

265mOhm