FD200R12PT4B6BOSA1

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Mfr.Part #
FD200R12PT4B6BOSA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MOD 1200V 300A 1100W
Stock
20,043
In Stock :
20,043

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
Package / Case :
Module
Input :
Standard
Input Capacitance (Cies) @ Vce :
12.5nF @ 25V
RoHS Status :
Non-RoHS Compliant
Factory Lead Time :
24 Weeks
Vce(on) (Max) @ Vge, Ic :
2.1V @ 15V, 200A
Operating Temperature :
-40°C~150°C
Published :
2002
Power - Max :
1100W
Voltage - Collector Emitter Breakdown (Max) :
1200V
Current - Collector (Ic) (Max) :
300A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
IGBT Type :
Trench Field Stop
Halogen Free :
Not Halogen Free
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Configuration :
Three Phase Inverter
NTC Thermistor :
yes
Mounting Type :
Chassis Mount
Lead Free :
Contains Lead
Current - Collector Cutoff (Max) :
15µA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
ECCN Code :
EAR99
Introducing Transistors - IGBTs - Modules Infineon Technologies FD200R12PT4B6BOSA1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:Module, Operating Temperature:-40°C~150°C, Mounting Type:Chassis Mount, FD200R12PT4B6BOSA1 pinout, FD200R12PT4B6BOSA1 datasheet PDF, FD200R12PT4B6BOSA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies FD200R12PT4B6BOSA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies FD200R12PT4B6BOSA1


FD200R12PT4B6BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

FD200R12PT4B6BOSA1 Description


FD200R12PT4B6BOSA1 is a single IGBT with a Voltage - Collector Emitter Breakdown (Max) of 1200V from Infineon Technologies. FD200R12PT4B6BOSA1 operates between -40°C~150°C TJ, and its Max Collector Current is 300A. The FD200R12PT4B6BOSA1 has 3 pins and it is available in Module packaging way. FD200R12PT4B6BOSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.



FD200R12PT4B6BOSA1 Features


  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 200A

  • Voltage - Collector Emitter Breakdown (Max): 1200V

  • Input Capacitance (Cies) @ Vce: 12.5nF @ 25V

  • Current - Collector (Ic) (Max): 300A

  • Current - Collector Cutoff (Max): 15μA



FD200R12PT4B6BOSA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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