FCU850N80Z

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Weight :

343.08mg

Mount :

Through Hole

Continuous Drain Current (ID) :

6A

Drain to Source Voltage (Vdss) :

800V

Vgs(th) (Max) @ Id :

4.5V @ 600μA

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Series :

SuperFET® II

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Reach Compliance Code :

not_compliant

Fall Time (Typ) :

4.5 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Resistance :

850mOhm

Turn-Off Delay Time :

40 ns

Input Capacitance (Ciss) (Max) @ Vds :

1315pF @ 100V

Mounting Type :

Through Hole

Rise Time :

10ns

Turn On Delay Time :

16 ns

Rds On (Max) @ Id, Vgs :

850m Ω @ 3A, 10V

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Element Configuration :

Single

Pbfree Code :

yes

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Channels :

1

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

12 Weeks

Power Dissipation-Max :

75W Tc

Operating Temperature :

-55°C~150°C TJ