FCU7N60TU

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

920pF @ 25V

DS Breakdown Voltage-Min :

600V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±30V

Drain to Source Voltage (Vdss) :

600V

Pin Count :

3

Rds On (Max) @ Id, Vgs :

600m Ω @ 3.5A, 10V

Qualification Status :

COMMERCIAL

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

7A

Series :

SuperFET™

Mounting Type :

Through Hole

Packaging :

Tube

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Number of Terminations :

3

JESD-30 Code :

R-PSIP-T3

Vgs(th) (Max) @ Id :

5V @ 250μA

Power Dissipation-Max :

83W Tc

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Surface Mount :

No

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

21A

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

230 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

MATTE TIN

Drain-source On Resistance-Max :

0.6Ohm