FCU5N60TU
- Mfr.Part #
- FCU5N60TU
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 4.6A I-PAK
- Stock
- 1,171
- In Stock :
- 1,171
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 54W Tc
- Case Connection :
- Isolated
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 10V
- Series :
- SuperFET™
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Threshold Voltage :
- 5V
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 30V
- Drain to Source Breakdown Voltage :
- 600V
- Transistor Application :
- SWITCHING
- Weight :
- 343.08mg
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 4.6A
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 950m Ω @ 2.3A, 10V
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~150°C TJ
- Turn-Off Delay Time :
- 47 ns
- Factory Lead Time :
- 36 Weeks
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Tin (Sn)
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Power Dissipation :
- 54W
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Mount :
- Through Hole
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 22 ns
- Vgs (Max) :
- ±30V
- Voltage - Rated DC :
- 600V
- Lifecycle Status :
- ACTIVE, NOT REC (Last Updated: 3 days ago)
- Drain-source On Resistance-Max :
- 0.95Ohm
- Rise Time :
- 40ns
- Current Rating :
- 4.6A
- Turn On Delay Time :
- 12 ns
- Current - Continuous Drain (Id) @ 25°C :
- 4.6A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 600pF @ 25V
- Datasheets
- FCU5N60TU

N-Channel Tube 950m Ω @ 2.3A, 10V ±30V 600pF @ 25V 16nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
FCU5N60TU Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 600pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 4.6A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 47 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.5V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.
FCU5N60TU Features
a continuous drain current (ID) of 4.6A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 47 ns
a threshold voltage of 5V
FCU5N60TU Applications
There are a lot of ON Semiconductor
FCU5N60TU applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FCU5N60TU | onsemi | 1,171 | 4.6A, 600V, 0.95OHM, N-CHANNEL, |
















