FCU4300N80Z

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Mfr.Part #
FCU4300N80Z
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 800V 1.6A IPAK
Stock
1,800
In Stock :
1,800

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Factory Lead Time :
17 Weeks
Gate Charge (Qg) (Max) @ Vgs :
8.8nC @ 10V
Packaging :
Tube
Rise Time :
6.5ns
FET Type :
N-Channel
RoHS Status :
ROHS3 Compliant
Element Configuration :
Single
Turn-Off Delay Time :
21 ns
Continuous Drain Current (ID) :
1.6A
Pbfree Code :
yes
Rds On (Max) @ Id, Vgs :
4.3 Ω @ 800mA, 10V
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
JESD-609 Code :
e3
Vgs(th) (Max) @ Id :
4.5V @ 160μA
Drain to Source Breakdown Voltage :
800V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Series :
SuperFET® II
HTS Code :
8541.29.00.95
Input Capacitance (Ciss) (Max) @ Vds :
355pF @ 100V
Power Dissipation-Max :
27.8W Tc
Mounting Type :
Through Hole
Fall Time (Typ) :
16 ns
Reach Compliance Code :
not_compliant
Gate to Source Voltage (Vgs) :
30V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs (Max) :
±20V
Turn On Delay Time :
10 ns
Operating Temperature :
-55°C~150°C TJ
Resistance :
4.3Ohm
ECCN Code :
EAR99
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
1.6A Tc
Terminal Finish :
Tin (Sn)
Weight :
343.08mg
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Mount :
Through Hole
Datasheets
FCU4300N80Z
Introducing Transistors - FETs, MOSFETs - Single onsemi FCU4300N80Z from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, FCU4300N80Z pinout, FCU4300N80Z datasheet PDF, FCU4300N80Z amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FCU4300N80Z ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FCU4300N80Z


N-Channel Tube 4.3 Ω @ 800mA, 10V ±20V 355pF @ 100V 8.8nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA

FCU4300N80Z Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 355pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.6A amps.In this device, the drain-source breakdown voltage is 800V and VGS=800V, so the drain-source breakdown voltage is 800V in this case.It is [21 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

FCU4300N80Z Features


a continuous drain current (ID) of 1.6A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 21 ns


FCU4300N80Z Applications


There are a lot of ON Semiconductor
FCU4300N80Z applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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FCU4300N80Z onsemi 1,000 MOSFET N-CH 800V 1.6A I-PAK
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