FCU4300N80Z
- Mfr.Part #
- FCU4300N80Z
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 1.6A IPAK
- Stock
- 1,800
- In Stock :
- 1,800
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 17 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 8.8nC @ 10V
- Packaging :
- Tube
- Rise Time :
- 6.5ns
- FET Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Turn-Off Delay Time :
- 21 ns
- Continuous Drain Current (ID) :
- 1.6A
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 4.3 Ω @ 800mA, 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 4.5V @ 160μA
- Drain to Source Breakdown Voltage :
- 800V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Series :
- SuperFET® II
- HTS Code :
- 8541.29.00.95
- Input Capacitance (Ciss) (Max) @ Vds :
- 355pF @ 100V
- Power Dissipation-Max :
- 27.8W Tc
- Mounting Type :
- Through Hole
- Fall Time (Typ) :
- 16 ns
- Reach Compliance Code :
- not_compliant
- Gate to Source Voltage (Vgs) :
- 30V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±20V
- Turn On Delay Time :
- 10 ns
- Operating Temperature :
- -55°C~150°C TJ
- Resistance :
- 4.3Ohm
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 1.6A Tc
- Terminal Finish :
- Tin (Sn)
- Weight :
- 343.08mg
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Mount :
- Through Hole
- Datasheets
- FCU4300N80Z

N-Channel Tube 4.3 Ω @ 800mA, 10V ±20V 355pF @ 100V 8.8nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
FCU4300N80Z Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 355pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 1.6A amps.In this device, the drain-source breakdown voltage is 800V and VGS=800V, so the drain-source breakdown voltage is 800V in this case.It is [21 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 10 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
FCU4300N80Z Features
a continuous drain current (ID) of 1.6A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 21 ns
FCU4300N80Z Applications
There are a lot of ON Semiconductor
FCU4300N80Z applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FCU4300N80Z | onsemi | 1,000 | MOSFET N-CH 800V 1.6A I-PAK |
















