FCP7N60

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Mount :

Through Hole

Number of Terminations :

3

Resistance :

600mOhm

Number of Pins :

3

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

RoHS Status :

ROHS3 Compliant

Power Dissipation :

83W

Current Rating :

11A

Lead Free :

Lead Free

Fall Time (Typ) :

32 ns

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Weight :

1.8g

Turn On Delay Time :

35 ns

Radiation Hardening :

No

Continuous Drain Current (ID) :

7A

Package / Case :

TO-220-3

Width :

4.7mm

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

920pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

600V

Vgs (Max) :

±30V

Length :

10.1mm

Packaging :

Tube

Drain to Source Breakdown Voltage :

600V

Threshold Voltage :

5V

Terminal Finish :

Tin (Sn)

Drain Current-Max (Abs) (ID) :

7A

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

Series :

SuperFET™

FET Type :

N-Channel

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Factory Lead Time :

12 Weeks

Rds On (Max) @ Id, Vgs :

600m Ω @ 3.5A, 10V

REACH SVHC :

No SVHC

Pbfree Code :

yes

Transistor Application :

SWITCHING

Power Dissipation-Max :

83W Tc

Height :

9.4mm

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

75 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

JESD-609 Code :

e3

Rise Time :

55ns