FCP600N60Z

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Mfr.Part #
FCP600N60Z
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 600V 7.4A TO220-3
Stock
7,756
In Stock :
7,756

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Continuous Drain Current (ID) :
7.4A
Pbfree Code :
yes
JESD-609 Code :
e3
Drain to Source Breakdown Voltage :
650V
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Terminal Finish :
Tin (Sn)
FET Type :
N-Channel
Packaging :
Tube
Factory Lead Time :
15 Weeks
Rds On (Max) @ Id, Vgs :
600m Ω @ 3.7A, 10V
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
1120pF @ 25V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Width :
4.83mm
Power Dissipation :
89W
Mounting Type :
Through Hole
Number of Pins :
3
Height :
16.51mm
Fall Time (Typ) :
28 ns
Gate to Source Voltage (Vgs) :
20V
Drain to Source Voltage (Vdss) :
600V
Rise Time :
24ns
Turn On Delay Time :
13 ns
Lead Free :
Lead Free
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package / Case :
TO-220-3
Weight :
1.8g
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Element Configuration :
Single
Number of Elements :
1
Mount :
Through Hole
Published :
2010
ECCN Code :
EAR99
Vgs(th) (Max) @ Id :
3.5V @ 250µA
Turn-Off Delay Time :
88 ns
Length :
10.67mm
RoHS Status :
ROHS3 Compliant
Current - Continuous Drain (Id) @ 25°C :
7.4A Tc
Series :
SuperFET® II
Vgs (Max) :
±20V
Power Dissipation-Max :
89W Tc
Gate Charge (Qg) (Max) @ Vgs :
26nC @ 10V
Datasheets
FCP600N60Z
Introducing Transistors - FETs, MOSFETs - Single onsemi FCP600N60Z from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-220-3, FCP600N60Z pinout, FCP600N60Z datasheet PDF, FCP600N60Z amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FCP600N60Z ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FCP600N60Z


N-Channel Tube 600m Ω @ 3.7A, 10V ±20V 1120pF @ 25V 26nC @ 10V 600V TO-220-3

FCP600N60Z Overview


The maximum input capacitance of this device is 1120pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 7.4A.When VGS=650V, and ID flows to VDS at 650VVDS, the drain-source breakdown voltage is 650V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 88 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 13 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

FCP600N60Z Features


a continuous drain current (ID) of 7.4A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 88 ns
a 600V drain to source voltage (Vdss)


FCP600N60Z Applications


There are a lot of ON Semiconductor
FCP600N60Z applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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