FCP600N60Z
- Mfr.Part #
- FCP600N60Z
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 7.4A TO220-3
- Stock
- 7,756
- In Stock :
- 7,756
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 7.4A
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Drain to Source Breakdown Voltage :
- 650V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Terminal Finish :
- Tin (Sn)
- FET Type :
- N-Channel
- Packaging :
- Tube
- Factory Lead Time :
- 15 Weeks
- Rds On (Max) @ Id, Vgs :
- 600m Ω @ 3.7A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1120pF @ 25V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Width :
- 4.83mm
- Power Dissipation :
- 89W
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Height :
- 16.51mm
- Fall Time (Typ) :
- 28 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Voltage (Vdss) :
- 600V
- Rise Time :
- 24ns
- Turn On Delay Time :
- 13 ns
- Lead Free :
- Lead Free
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Package / Case :
- TO-220-3
- Weight :
- 1.8g
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Number of Elements :
- 1
- Mount :
- Through Hole
- Published :
- 2010
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Turn-Off Delay Time :
- 88 ns
- Length :
- 10.67mm
- RoHS Status :
- ROHS3 Compliant
- Current - Continuous Drain (Id) @ 25°C :
- 7.4A Tc
- Series :
- SuperFET® II
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 89W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 10V
- Datasheets
- FCP600N60Z

N-Channel Tube 600m Ω @ 3.7A, 10V ±20V 1120pF @ 25V 26nC @ 10V 600V TO-220-3
FCP600N60Z Overview
The maximum input capacitance of this device is 1120pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 7.4A.When VGS=650V, and ID flows to VDS at 650VVDS, the drain-source breakdown voltage is 650V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 88 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 13 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
FCP600N60Z Features
a continuous drain current (ID) of 7.4A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 88 ns
a 600V drain to source voltage (Vdss)
FCP600N60Z Applications
There are a lot of ON Semiconductor
FCP600N60Z applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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