FCP099N60E

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.099Ohm

Power Dissipation-Max :

357W Tc

Series :

SuperFET® II

Drive Voltage (Max Rds On,Min Rds On) :

10V

HTS Code :

8541.29.00.95

Gate Charge (Qg) (Max) @ Vgs :

114nC @ 10V

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Packaging :

Tube

Vgs(th) (Max) @ Id :

3.5V @ 250µA

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

600V

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

37A Tc

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

12 Weeks

Rds On (Max) @ Id, Vgs :

99m Ω @ 18.5A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rise Time :

23ns

Number of Pins :

3

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

37A

JEDEC-95 Code :

TO-220AB

Pbfree Code :

yes

Avalanche Energy Rating (Eas) :

809 mJ

FET Type :

N-Channel

Turn-Off Delay Time :

92 ns

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

3465pF @ 380V

Number of Terminations :

3

Package / Case :

TO-220-3

Turn On Delay Time :

24 ns

Mount :

Through Hole

Pulsed Drain Current-Max (IDM) :

111A

Element Configuration :

Single

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

600V

Number of Elements :

1

Weight :

1.8g

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Transistor Element Material :

SILICON

Fall Time (Typ) :

22 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED