FCP099N60E
- Mfr.Part #
- FCP099N60E
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 37A TO220-3
- Stock
- 24,420
- In Stock :
- 24,420
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 3465pF @ 380V
- Avalanche Energy Rating (Eas) :
- 809 mJ
- Turn-Off Delay Time :
- 92 ns
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Series :
- SuperFET® II
- Factory Lead Time :
- 12 Weeks
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-220AB
- Element Configuration :
- Single
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 37A
- Power Dissipation-Max :
- 357W Tc
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 37A Tc
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 22 ns
- HTS Code :
- 8541.29.00.95
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pbfree Code :
- yes
- Rise Time :
- 23ns
- Drain-source On Resistance-Max :
- 0.099Ohm
- Terminal Finish :
- Tin (Sn)
- Pulsed Drain Current-Max (IDM) :
- 111A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 114nC @ 10V
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- Drain to Source Voltage (Vdss) :
- 600V
- DS Breakdown Voltage-Min :
- 600V
- Operating Mode :
- ENHANCEMENT MODE
- JESD-609 Code :
- e3
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Package / Case :
- TO-220-3
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 24 ns
- Weight :
- 1.8g
- Rds On (Max) @ Id, Vgs :
- 99m Ω @ 18.5A, 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Datasheets
- FCP099N60E

N-Channel Tube 99m Ω @ 18.5A, 10V ±20V 3465pF @ 380V 114nC @ 10V 600V TO-220-3
FCP099N60E Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 809 mJ.A device's maximal input capacitance is 3465pF @ 380V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 37A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 92 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 111A, which is its maximum rated peak drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 24 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 600V.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
FCP099N60E Features
the avalanche energy rating (Eas) is 809 mJ
a continuous drain current (ID) of 37A
the turn-off delay time is 92 ns
based on its rated peak drain current 111A.
a 600V drain to source voltage (Vdss)
FCP099N60E Applications
There are a lot of ON Semiconductor
FCP099N60E applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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