FCMT299N60

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Mfr.Part #
FCMT299N60
Manufacturer
onsemi
Package / Case
4-PowerTSFN
Datasheet
Download
Description
MOSFET N-CH 600V 12A POWER88
Stock
1,372
In Stock :
1,372

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Peak Reflow Temperature (Cel) :
260
Gate Charge (Qg) (Max) @ Vgs :
51nC @ 10V
Gate to Source Voltage (Vgs) :
20V
Vgs (Max) :
±20V
Mount :
Surface Mount
Turn On Delay Time :
19 ns
Rise Time :
9ns
Resistance :
199mOhm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Element Configuration :
Single
RoHS Status :
ROHS3 Compliant
Pbfree Code :
yes
Fall Time (Typ) :
7 ns
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Operating Temperature :
-55°C~150°C TJ
Reach Compliance Code :
not_compliant
Drain to Source Breakdown Voltage :
600V
Current - Continuous Drain (Id) @ 25°C :
12A Ta
ECCN Code :
EAR99
Vgs(th) (Max) @ Id :
3.5V @ 250µA
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Type :
N-Channel
Input Capacitance (Ciss) (Max) @ Vds :
1948pF @ 380V
Mounting Type :
Surface Mount
Factory Lead Time :
33 Weeks
Package / Case :
4-PowerTSFN
Series :
SuperFET® II
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Channels :
1
Power Dissipation-Max :
125W Tc
Turn-Off Delay Time :
51 ns
Number of Pins :
4
Packaging :
Tape and Reel (TR)
Rds On (Max) @ Id, Vgs :
299m Ω @ 6A, 10V
Continuous Drain Current (ID) :
12A
Weight :
449.03225mg
Datasheets
FCMT299N60
Introducing Transistors - FETs, MOSFETs - Single onsemi FCMT299N60 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:4-PowerTSFN, Number of Channels:1, Number of Pins:4, FCMT299N60 pinout, FCMT299N60 datasheet PDF, FCMT299N60 amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FCMT299N60 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FCMT299N60


N-Channel Tape & Reel (TR) 299m Ω @ 6A, 10V ±20V 1948pF @ 380V 51nC @ 10V 4-PowerTSFN

FCMT299N60 Description


The FCMT299N60 is a brand-new high-voltage super-junction (SJ) MOSFET family from Fairchild Semiconductor that uses charge balance technology to achieve remarkable low on-resistance and low gate charge performance. This technology is designed to reduce conduction loss, improve switching performance, increase dv/dt rate, and increase avalanche energy. As a result, SuperFET II MOSFETs are well-suited to switching power applications such server/telecom power, adaptors, and solar inverters.



FCMT299N60 Features


?TJ = 150°C @ 650 V


?250 mQ RDS(on) (Typ.)


?Extremely Low Gate Charge (Qg = 39 nC)


? Low Capacitance Effective Output (Typ. Coss(eff.) = 127 pF)


? Avalanche-tested to the nth degree


? Compliant with RoHS



FCMT299N60 Applications


? Power Supplies for Servers and Telecoms


? Inverters for solar power


? Receptacles


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