FCMT299N60
- Mfr.Part #
- FCMT299N60
- Manufacturer
- onsemi
- Package / Case
- 4-PowerTSFN
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 12A POWER88
- Stock
- 1,372
- In Stock :
- 1,372
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- 260
- Gate Charge (Qg) (Max) @ Vgs :
- 51nC @ 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs (Max) :
- ±20V
- Mount :
- Surface Mount
- Turn On Delay Time :
- 19 ns
- Rise Time :
- 9ns
- Resistance :
- 199mOhm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Fall Time (Typ) :
- 7 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Operating Temperature :
- -55°C~150°C TJ
- Reach Compliance Code :
- not_compliant
- Drain to Source Breakdown Voltage :
- 600V
- Current - Continuous Drain (Id) @ 25°C :
- 12A Ta
- ECCN Code :
- EAR99
- Vgs(th) (Max) @ Id :
- 3.5V @ 250µA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 1948pF @ 380V
- Mounting Type :
- Surface Mount
- Factory Lead Time :
- 33 Weeks
- Package / Case :
- 4-PowerTSFN
- Series :
- SuperFET® II
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Channels :
- 1
- Power Dissipation-Max :
- 125W Tc
- Turn-Off Delay Time :
- 51 ns
- Number of Pins :
- 4
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 299m Ω @ 6A, 10V
- Continuous Drain Current (ID) :
- 12A
- Weight :
- 449.03225mg
- Datasheets
- FCMT299N60

N-Channel Tape & Reel (TR) 299m Ω @ 6A, 10V ±20V 1948pF @ 380V 51nC @ 10V 4-PowerTSFN
FCMT299N60 Description
The FCMT299N60 is a brand-new high-voltage super-junction (SJ) MOSFET family from Fairchild Semiconductor that uses charge balance technology to achieve remarkable low on-resistance and low gate charge performance. This technology is designed to reduce conduction loss, improve switching performance, increase dv/dt rate, and increase avalanche energy. As a result, SuperFET II MOSFETs are well-suited to switching power applications such server/telecom power, adaptors, and solar inverters.
FCMT299N60 Features
?TJ = 150°C @ 650 V
?250 mQ RDS(on) (Typ.)
?Extremely Low Gate Charge (Qg = 39 nC)
? Low Capacitance Effective Output (Typ. Coss(eff.) = 127 pF)
? Avalanche-tested to the nth degree
? Compliant with RoHS
FCMT299N60 Applications
? Power Supplies for Servers and Telecoms
? Inverters for solar power
? Receptacles
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