FCH76N60N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Power Dissipation-Max :

543W Tc

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

76A Tc

Terminal Finish :

Tin (Sn)

Height :

21mm

Threshold Voltage :

2V

Radiation Hardening :

No

Number of Terminations :

3

Length :

15.95mm

Mounting Type :

Through Hole

Weight :

6.39g

Width :

5.03mm

Pbfree Code :

yes

Series :

SupreMOS™

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

36m Ω @ 38A, 10V

Number of Pins :

3

JESD-609 Code :

e3

Rise Time :

24ns

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Package / Case :

TO-247-3

Factory Lead Time :

12 Weeks

Packaging :

Tube

Published :

2013

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

8022 mJ

Turn-Off Delay Time :

235 ns

Number of Elements :

1

Fall Time (Typ) :

32 ns

Continuous Drain Current (ID) :

76A

Pulsed Drain Current-Max (IDM) :

228A

Turn On Delay Time :

34 ns

Gate Charge (Qg) (Max) @ Vgs :

285nC @ 10V

Power Dissipation :

543W

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

12385pF @ 100V

Transistor Element Material :

SILICON