FCD850N80Z

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

6A

Reach Compliance Code :

not_compliant

Drain to Source Breakdown Voltage :

800V

Rds On (Max) @ Id, Vgs :

850m Ω @ 3A, 10V

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Series :

SuperFET® II

Turn-Off Delay Time :

40 ns

Mount :

Surface Mount

Power Dissipation-Max :

75W Tc

Weight :

260.37mg

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Input Capacitance (Ciss) (Max) @ Vds :

1315pF @ 100V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Element Configuration :

Single

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

JESD-609 Code :

e3

Rise Time :

10ns

Mounting Type :

Surface Mount

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4.5V @ 600μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

245

Fall Time (Typ) :

4.5 ns

Pbfree Code :

yes

Vgs (Max) :

±20V

Factory Lead Time :

13 Weeks

Number of Channels :

1

Turn On Delay Time :

16 ns